Product Information

G40T120AK3S

G40T120AK3S electronic component of CRMICRO

Datasheet
278W 238ns 77ns +150℃@(Tj) 80A 1.2kV 6V@250uA 208nC@40A,15V 1.9V@10A,15V 1.5mJ 2.8mJ 1mA@1.2kV 6.618nF@25V 2.4V@20A 160A TO-247 IGBTs ROHS
Manufacturer: CRMICRO
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.369 ea
Line Total: USD 2.37

204 - Global Stock
Ships to you between
Tue. 07 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
647 - Global Stock


Ships to you between
Tue. 07 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

G40T120AK3S
CRMICRO

1 : USD 3.7006
10 : USD 3.3291
25 : USD 3.1401
100 : USD 2.9017
500 : USD 2.7942
1000 : USD 2.747

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Power Dissipation Pd
Turn Off Delay Time Tdoff
Turn On Delay Time Tdon
Operating Temperature
Collector Current Ic
Collector-Emitter Breakdown Voltage Vces
Type
Gate-Emitter Threshold Voltage Vgeth@Ic
Total Gate Charge Qg@Ic Vge
Collector-Emitter Saturation Voltage Vcesat@Ic Vge
Diode Reverse Recovery Time Trr
Turn Off Switching Loss Eoff
Turn On Switching Loss Eon
Collector Cut-Off Current Ices@Vce
Input Capacitance Cies@Vce
Diode Forward Voltage Vf@If
Pulsed Collector Current Icm
LoadingGif

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Additional Infomation About Product

The G40T120AK3S is an Insulated Gate Bipolar Transistor (IGBT) manufactured by CRMICRO with RoHS compliance. It has an average gate current of 80A and a breakdown voltage of 1.2kV. This IGBT also has a maximum storage temperature up to +150? (Tj) and a turn-off energy dissipation of 2.8mJ. Other specifications include total gate charge of 238ns, gate charge at 25V of 6.618nF, gate charge at 6V of 250uA, and gate charge at 15V of 1mA. This IGBT features a withstand voltage of 1.9V at 10A, and a maximum collector current of 160A with a turn-on energy dissipation of 1.5mJ. The package type of this device is TO-247. Finally, it has a power dissipation of 278W and a maximum collector-emitter saturation voltage of 2.4V at 20A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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