Product Information

CRTS030N04L

Product Image X-ON

Datasheet
MOSFET N Channel 40V 80A(Tc) 2.7V @ 250uA 3.3mO @ 50A,10V TO-263 RoHS

Manufacturer: CRMICRO
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Price (USD)

1: USD 0.8908 ea
Line Total: USD 0.8908

3 - Global Stock
Ships to you between
Tue. 20 Jun to Fri. 23 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3 - Global Stock


Ships to you between
Tue. 20 Jun to Fri. 23 Jun

MOQ : 1
Multiples : 1

Stock Image

CRTS030N04L
CRMICRO

1 : USD 0.5091
10 : USD 0.4469
30 : USD 0.436
100 : USD 0.4232

     
Manufacturer
CRMICRO
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
TO - 263
Brand Category
Crmicro
Fet Type
NChannel
Drain To Source Voltagevdss
40 V
Continuous Drain Current Id @ 25°C
80 A (T C)
Vgsth Max @ Id
2.7V @ 250uA
Rds On Max @ Id Vgs
3.3mO @ 50A,10V
Power Dissipation-Max Ta 25°C
175 W (Tc)
Drain Source Voltage Vdss
40 V
Continuous Drain Current Id
80 A
Power Dissipation Pd
175 W
Drain Source On Resistance Rdson@Vgs Id
3.3 mOhms @10V , 50A
Gate Threshold Voltage Vgsth@Id
2.7 V @250uA
Type
N Channel
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CRTS030N04L ( ) Trench N-MOSFET 40V, 2.8m, 80A Features Product Summary V Uses CRM(CQ) advanced Trench technology 40V DS Extremely low on-resistance R R 2.8m DS(on) DS(on) typ. I Excellent Q xR product(FOM) 80A D g DS(on) Qualified according to JEDEC criteria 111000000%%% DDDVVVDDDSSS TTTeeesssttteeeddd Applications Motor control and drive 111000000%%% AAAvvvaaalllaaannnccchhheee TTTeeesssttteeeddd Battery management UPS (Uninterrupible Power Supplies) Package Marking and Ordering Information Part Marking Package Reel Size Tape Width Qty Packing CRTS030N04L TO-263 Tube N/A N/A 50pcs CRTS030N04L Absolute Maximum Ratings Parameter Symbol Value Unit V Drain-source voltage 40 V DS Continuous drain current T = 25C (Silicon limit) 176 C I A D T = 25C (Package limit) 80 C T = 100C (Silicon limit) 112 C Pulsed drain current (T = 25C, t limited by T ) I 320 A C p jmax D pulse E Avalanche energy, single pulse (L=0.5mH, Rg=50 ) 210 mJ AS V Gate-Source voltage 20 V GS Power dissipation (T = 25C) P 175 W C tot OOppeerraattiinngg jjuunnccttiioonn aanndd ssttoorraaggee tteemmppeerraattuurree TT ,, TT --5555......++115500 CC jj ssttgg China Resources Microelectronics (Chongqing) Limited Page 1 CRTS030N04L ( ) Trench N-MOSFET 40V, 2.8m, 80A Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction case. R 0.72 thJC C/W R Thermal resistance, junction ambient(min. footprint) 132 thJA Electrical Characteristic (at Tj = 25 C, unless otherwise specified) Value Symbol Parameter Unit Test Condition min. typ. max. Static Characteristic Drain-source breakdown BV 40 - - V V =0V, I =250uA DSS GS D voltage V V =V ,I =250uA Gate threshold voltage 1.3 2 2.7 V GS(th ) DS GS D V =40V,V =0V DS GS Zero gate voltage drain I - 0.05 1 A T =25C DSS j current -- -- 1100 TT ==115500CC jj Gate-source leakage I V =20V,V =0V - 10 100 nA GSS GS DS current V =10V, I =50A, GS D Drain-source on-state R - 2.8 3.3 m Tj=25C DS(on) resistance - 4.7 5.6 Tj=150C g V =5V,I =50A Transconductance - 173 - S fs DS D Dynamic Characteristic C Input Capacitance - 5734 - iss V =0V, V =20V, C GS DS Output Capacitance - 686 - oss pF f=1MHz Reverse Transfer C - 338 - rss Capacitance Gate Total Charge Q - 131 - G V =10V, V =20V, GS DS Gate-Source charge Q - 24 - nC gs I =50A, f=1MHz D Q Gate-Drain charge - 35 - gd t Turn-on delay time - 16 - d(on) t Rise time - 111 - r V =10V, V =20V, GS DD ns R =2.7 G ext t Turn-off delay time - 73 - d(off) t Fall time - 110 - f VV ==00VV,, VV ==00VV,, GGSS DDSS GGaattee rreessiissttaannccee RR -- 00..88 -- GG f=1MHz China Resources Microelectronics (Chongqing) Limited Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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