CRTS030N04L ( ) Trench N-MOSFET 40V, 2.8m, 80A Features Product Summary V Uses CRM(CQ) advanced Trench technology 40V DS Extremely low on-resistance R R 2.8m DS(on) DS(on) typ. I Excellent Q xR product(FOM) 80A D g DS(on) Qualified according to JEDEC criteria 111000000%%% DDDVVVDDDSSS TTTeeesssttteeeddd Applications Motor control and drive 111000000%%% AAAvvvaaalllaaannnccchhheee TTTeeesssttteeeddd Battery management UPS (Uninterrupible Power Supplies) Package Marking and Ordering Information Part Marking Package Reel Size Tape Width Qty Packing CRTS030N04L TO-263 Tube N/A N/A 50pcs CRTS030N04L Absolute Maximum Ratings Parameter Symbol Value Unit V Drain-source voltage 40 V DS Continuous drain current T = 25C (Silicon limit) 176 C I A D T = 25C (Package limit) 80 C T = 100C (Silicon limit) 112 C Pulsed drain current (T = 25C, t limited by T ) I 320 A C p jmax D pulse E Avalanche energy, single pulse (L=0.5mH, Rg=50 ) 210 mJ AS V Gate-Source voltage 20 V GS Power dissipation (T = 25C) P 175 W C tot OOppeerraattiinngg jjuunnccttiioonn aanndd ssttoorraaggee tteemmppeerraattuurree TT ,, TT --5555......++115500 CC jj ssttgg China Resources Microelectronics (Chongqing) Limited Page 1 CRTS030N04L ( ) Trench N-MOSFET 40V, 2.8m, 80A Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction case. R 0.72 thJC C/W R Thermal resistance, junction ambient(min. footprint) 132 thJA Electrical Characteristic (at Tj = 25 C, unless otherwise specified) Value Symbol Parameter Unit Test Condition min. typ. max. Static Characteristic Drain-source breakdown BV 40 - - V V =0V, I =250uA DSS GS D voltage V V =V ,I =250uA Gate threshold voltage 1.3 2 2.7 V GS(th ) DS GS D V =40V,V =0V DS GS Zero gate voltage drain I - 0.05 1 A T =25C DSS j current -- -- 1100 TT ==115500CC jj Gate-source leakage I V =20V,V =0V - 10 100 nA GSS GS DS current V =10V, I =50A, GS D Drain-source on-state R - 2.8 3.3 m Tj=25C DS(on) resistance - 4.7 5.6 Tj=150C g V =5V,I =50A Transconductance - 173 - S fs DS D Dynamic Characteristic C Input Capacitance - 5734 - iss V =0V, V =20V, C GS DS Output Capacitance - 686 - oss pF f=1MHz Reverse Transfer C - 338 - rss Capacitance Gate Total Charge Q - 131 - G V =10V, V =20V, GS DS Gate-Source charge Q - 24 - nC gs I =50A, f=1MHz D Q Gate-Drain charge - 35 - gd t Turn-on delay time - 16 - d(on) t Rise time - 111 - r V =10V, V =20V, GS DD ns R =2.7 G ext t Turn-off delay time - 73 - d(off) t Fall time - 110 - f VV ==00VV,, VV ==00VV,, GGSS DDSS GGaattee rreessiissttaannccee RR -- 00..88 -- GG f=1MHz China Resources Microelectronics (Chongqing) Limited Page 2