Product Information

CRST040N10N

CRST040N10N electronic component of CRMICRO

Datasheet
MOSFET N Channel 100V 120A(Tc) 4V @ 250uA 4mO @ 50A,10V TO-220 RoHS
Manufacturer: CRMICRO
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8584 ea
Line Total: USD 0.86

880 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
55 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

CRST040N10N
CRMICRO

1 : USD 1.059
10 : USD 0.8922
50 : USD 0.7553
100 : USD 0.6728
500 : USD 0.6224
1000 : USD 0.5979

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

.The CRST040N10N is a MOSFET N Channel 100V 120A(Tc) 4V @ 250uA 4mO @ 50A, 10V TO-220 RoHS designed and manufactured by CRMICRO. It is a power management semiconductor device providing fast switching and low on-state resistance (Rds) for efficient power delivery. This part features maximum drain source voltage of 100V, maximum drain current of 120A(Tc) with a 4V gate threshold voltageand an impressive 4mO @ 50A maximum drain-source resistance. It is a three terminal semiconductor package with TO-220 enclosure and designed to meet the requirements of RoHS (Restriction of Hazardous Substances) directive. The CRST040N10N is ideal for use in high efficiency DC/DC converters for automotive applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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