DC COMPONENTS CO., LTD. 2SD965 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2oTyp 2 = Collector .190(4.83) 3 = Base .170(4.33) Typ 2o .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) .022(0.56) .022(0.56) Characteristic Symbol Rating Unit .014(0.36) .014(0.36) .050 Typ Collector-Base Voltage VCBO 40 V (1.27) .100 Typ (2.54) Collector-Emitter Voltage VCEO 20 V .148(3.76) Emitter-Base Voltage VEBO 7 V .132(3.36) 3 2 1 Collector Current IC 5 A .050 Total Power Dissipation PD 750 mW Typ 5oTyp. 5oTyp. (1.27) Junction Temperature TJ +150 oC Dimensions in inches and (millimeters) Storage Temperature TSTG -55 to +150 oC Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 40 - - V IC=100A, IE=0 Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 7 - - V IE=10A, IC=0 Collector Cutoff Current ICBO - - 0.1 A VCB=10V, IE=0 Emitter Cutoff Current IEBO - - 0.1 A VEB=7V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - 0.35 1 V IC=3A, IB=100mA hFE1 230 - 800 - IC=0.5A, VCE=2V (1) DC Current Gain hFE2 150 - - - IC=2A, VCE=2V Transition Frequency fT - 150 - MHz IE=50mA, VCE=6V Output Capacitance Cob - - 50 pF VCB=20V, f=1MHz, IE=0 (1)Pulse Test: Pulse Width 380s, Duty Cycle 2% Classification of hFE1 Rank Q R S Range 230~380 340~600 560~800