D5V0F1U2S9Q LOW CAPACITANCE UNIDIRECTIONAL TVS DIODE Product Summary Features V I C BR min pp max in typ Provides ESD Protection per IEC 61000-4-2 Standard: 6.0V 1.5A 0.5pF Air 15kV, Contact 15kV One Channel of ESD Protection Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications This new generation TVS is designed to protect sensitive electronics Case: SOD923 from the damage due to ESD. The combination of small size and high Case Material: Molded Plastic, Green Molding Compound. ESD surge capability makes it ideal for use in automotive applications UL Flammability Classification Rating 94V-0 such as Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe e3 USB Modules (Lead Free Plating). Solderable per MIL-STD-202, Method 208 HDMI Ports Weight: 0.001 grams (Approximate) LVDS Pin 1 SOD923 Pin 2 Top View Device Schematic Ordering Information (Note 5) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D5V0F1U2S9Q-7 Automotive TL 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See D5V0F1U2S9Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current 1.5 A 8/20s, Per Figure 2 I PP Standard IEC 61000-4-2 ESD Protection Contact Discharge V 15 kV ESD Contact Standard IEC 61000-4-2 ESD Protection Air Discharge V 15 kV ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 6) 250 mW P D Thermal Resistance, Junction to Ambient (Note 6) 500 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C unless otherwise specified) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage V 5.5 V RWM Reverse Current (Note 7) I 100 nA V = 5.0V R R Reverse Breakdown Voltage V 6.0 V I = 1mA BR R Reverse Clamping Voltage, Positive Transients V 10 12 V I = 1A, t = 8/20s CL PP p (Note 8) Dynamic Resistance 0.9 RDYN IR = 1A, tp = 8/20s 0.4 0.65 pF V = 2.5V, f = 1MHz R Capacitance C T 0.5 pF V = 0V, f = 1MHz R Notes: 6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at