Product Information

DGTD65T50S1PT

Name: DGTD65T50S1PT
Brand: Diodes Incorporated
SKU: DGTD65T50S1PT_DiodesIncorporated
Availability: OutOfStock
Rating: 5 (11 reviews)

DGTD65T50S1PT electronic component of Diodes Incorporated

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See Product Specifications
Datasheet

IGBT Transistors IGBT 600V-X TO247 TUBE 0.45K

Manufacturer: Diodes Incorporated

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 450 Multiples : 450 DGTD65T50S1PT Diodes Incorporated	450 : USD 2.1482	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 DGTD65T50S1PT Diodes Incorporated	1 : USD 1.8113 10 : USD 1.635 30 : USD 1.5303 100 : USD 1.4431 500 : USD 1.3848 1000 : USD 1.3585	N/A Obsolete

0 - WHS 3 MOQ : 1 Multiples : 1 DGTD65T50S1PT Diodes Incorporated	1 : USD 10.329 10 : USD 7.319 25 : USD 6.929 100 : USD 5.775 450 : USD 4.9 900 : USD 4.0375 2700 : USD 3.9875	N/A Obsolete

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Additional Infomation About Product

The DGTD65T50S1PT is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Diodes Incorporated. It has a maximum voltage of 600V and offers a rated Gate current of 0.45 KAmps. This part is offered in a TO-247 package type and is suitable for a variety of switching applications. It is able to handle a high current (DC & AC), and provides fast switching speed and high efficiency. It features high temperature tolerance (up to 175°C over ambient) and a wide variety of voltage & wattage ratings for a range of switching applications. This part is RoHS-compliant, making it suitable for many applications in the automotive and industrial markets.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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Manufacturer Diodes Incorporated Diodes Incorporated
Product Category IGBT Transistors IGBT Transistors
Configuration Single Single
Collector- Emitter Voltage VCEO Max 650 V 650 V
Collector-Emitter Saturation Voltage 1.85 V 1.85 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 100 A 100 A
Gate-Emitter Leakage Current 100 nA 100 nA
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 375 W 375 W
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 175 C + 175 C
Continuous Collector Current Ic Max 100 A 100 A
Brand Diodes Incorporated Diodes Incorporated
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 450 450
Subcategory Igbts Igbts