DT1240A-04LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features Clamping Voltage: 7.5V at 10A 100ns, TLP 8.2V at 5.5A V (Min) I (Max) C (Typ) BR PP T (8s/20s) 5V 5.5A 0.55pF IEC 61000-4-2 (ESD): Air 16kV, Contact 14kV IEC 61000-4-5 (Lighting): 5.5A (8/20s) 4 Channels of ESD Protection Low Channel Input Capacitance of 0.55pF Typical TLP Dynamic Resistance: 0.2 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change The DT1240A-04LP is a high-performance device suitable for control (i.e. parts qualified to AEC-Q100/101/200, PPAP protecting four high-speed I/Os. These devices are assembled in capable, and manufactured in IATF 16949 certified facilities), U-DFN2510-10 package and have high ESD surge capability and low please contact us or your local Diodes representative. capacitance. DT1240A-04LP Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Condition Peak Pulse Current, per IEC 61000-4-5 I 5.5 A I/O to V , 8/20s PP SS 52 W Peak Pulse Power, per IEC 61000-4-5 P I/O to V , 8/20s PP SS Operating Voltage (DC) V 3.6 V I/O to V DC SS ESD Protection Contact Discharge, per IEC 61000-4-2 V 14 kV I/O to V ESD CONTACT SS ESD Protection Air Discharge, per IEC 61000-4-2 16 kV VESD AIR I/O to VSS Operating Temperature -55 to +85 C TOP Storage Temperature -55 to +150 C TSTG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient Typical (Note 5) R 360 C/W JA Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Working Voltage 3.3 V V RWM Reverse Current 1.0 A I V = 3.3V, I/O to V R R SS Reverse Breakdown Voltage 5 V VBR IR = 1mA, I/O to VSS Forward Clamping Voltage -1.0 -0.85 V VF IF = -15mA, I/O to VSS Reverse Clamping Voltage (Note 6) 8.2 9.5 V VC IPP = 5.5A, I/O to VSS, 8/20s ESD Clamping Voltage 7.5 V VESD TLP, 10A, tP = 100ns, I/O to VSS Dynamic Reverse Resistance 0.2 RDIF-R TLP, 10A, tP = 100ns, I/O to VSS Dynamic Forward Resistance 0.2 RDIF-F TLP, 10A, tP = 100ns, VSS to I/O Channel Input Capacitance 0.55 0.65 pF C V = 2.5V, V = 0V, f = 1MHz I/O I/O SS 55 0.04 pF Delta C C -C C -C I/O I/OMAX I/OMIN I/OMAX I/OMIN Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds website at