Green MB10F 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (V) I (A) Glass Passivated Die Construction RRM O F R Miniature Package Saves Space on PC Boards 1000 0.8 1.1 5 Reliable Robust Construction Ideal for SMT Manufacturing Low Forward Voltage Drop Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data Suitable for AC to DC bridge full wave rectification for SMPS, LED Case: MBF lighting, adapter, battery charger, home appliances, office equipment, Case Material: Molded Plastic. and telecommunication applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 0.08 grams (Approximate) Pin Diag ram Internal Schematic Top View Ordering Information (Note 4) Part Number Compliance Case Packaging MB10F-13 Commercial MBF 5,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See MB10F Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 1,000 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 700 V R(RMS) Average Rectified Output Current (Note 5) T = +125C 0.5 A I A O 0.8 T = +110C A Non-Repetitive Peak Forward Surge Current, 8.3ms 30 A I FSM Single Half Sine-Wave Superimposed on Rated Load 2 2 2 I t Rating for Fusing (1ms < t < 8.3ms) I t 3.74 A S Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Ambient (Note 6) 63 C/W R JA (Per Element) Typical Thermal Resistance, Junction to Lead (Per Element) R 39 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 1,000 Reverse Breakdown Voltage (Note 7) V V I = 5A (BR)R R 0.94 Forward Voltage (Per Element) V 1.1 V I = 0.8A, T = +25C F F A 0.2 V = 1,000V, T = +25C 5 R A Leakage Current (Note 7) (Per Element) A I R 14 500 V = 1,000V, T = +125C R A Total Capacitance (Per Element) 8 pF C V = 4V, f = 1.0MHz T R Notes: 5. Device mounted on FR-4 substrate, 1 *1 , 2oz, single-sided, PC boards with 0.1 *0.15 copper pad. 6. Device mounted on FR-4 substrate, 1 *1 , 2oz, single-sided, PC boards with 0.56 *0.73 copper pad. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 MB10F March 2017 Diodes Incorporated www.diodes.com Document number: DS39046 Rev. 3 - 2 ADVANCED INFORMATION NEW PRODUCT