Technical Data 11132 Effective September 2020 STN10XXXXXLXX TVS Diode ESD suppressor Applications USB ports Display port Wireless communications Digital visual interface (DVI) Cellular handsets & accessories Microcontroller input protection Environmental compliance and general Product features specifications Protects one bi-directional I/O line IEC61000-4-2 (ESD) Low clamping voltage 15 kV (air) Low operating voltage 8 kV (contact) Meets moisture sensitivity level (MSL) 3 IEC61000-4-5 (Lightning) 1 A (8/20 s) Molding compound flammability rating: UL 94V-0 HALOGEN Termination finish:Ni/Pd/Au Pb HF FREE Ordering part number ST N10 1 050 B L90 Family Package (N10 = DFN1006) Number of channels (1 or 2) Operating voltage (050- 5 V) Bi/Uni directional (B- Bi, Uni) Capacitance (L90- 0.9 pF) Pin out/functional diagram STN101050BL90 STN102050UL80Technical Data 11132 STN10XXXXXLXX Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STN101050BL90 STN102050UL80 Peak pulse power dissipation on 8/20 s waveform P 30 60 W pp ESD per IEC 61000-4-2 (Air) V +/-15 +/-15 kV ESD ESD per IEC 61000-4-2 (Contact) +/-8 +/-8 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds) C L Operating junction temperature range T -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STN101050BL90 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 6.0 - - V (V) T BR Reverse leakage current V = 5 V - - 1.0 I (A) RWM R Peak pulse current t = 8/20 s - - 1 I (A) p pp Clamping voltage I = 1 A, - 8.5 12.5 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 0.9 1.5 C (pF) RWM J STN102050UL80 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 6.0 - - V (V) T BR Reverse leakage current V = 5 V - - 1.0 I (A) RWM R Peak pulse current t = 8/20 s - - 5 I (A) p pp Clamping voltage I = 1 A, - 8.5 12 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - - 0.8 C (pF) RWM J Between I/O Mechanical parameters, pad layout- mm STN101050BL90 Part marking Dimension Minimum Typical Maximum A 0.45 0.50 0.55 A1 0 0.02 0.05 b 0.45 0.50 0.55 C 0.12 0.15 0.18 D 0.95 1.00 1.05 e 0.65 BSC E 0.55 0.60 0.65 L 0.20 0.25 0.30 L1 0.05 REF h 0.07 0.12 0.17 2 www.eaton.com/electronics