Technical Data 11152 Effective September 2020 STS321XXXUXXX TVS Diode ESD suppressor Applications Cellular handsets and accessories Microprocessor based equipment Portable electronics Notebooks, desktops, and servers Portable instrumentation Environmental compliance and general specifications IEC61000-4-2 (ESD) Product features Up to 30 kV (air) Protects one bi-directional I/O line Up to 30 kV (contact) Low clamping voltage IEC61000-4-5 (Lightning) Up to 25 A (8/20 s) Low leakage current Meets moisture sensitivity level (MSL) 3 HALOGEN Molding compound flammability rating: HF Pb FREE UL 94V-0 Termination finish: Tin Ordering part number ST S32 1 033 U 202 Family Package (S32- SOD-323) Number of channels (1-1) Operating voltage (033- 3.3 V) Bi/Uni directional (U- Uni) Capacitance (202- 200 pF) Pin out/functional diagramTechnical Data 11152 STS321XXXUXXX Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STS321033U202 STS321150U751 STS321360U351 STS321050U182 STS321070U162 STS321120U901 STS321240U401 Peak pulse power dissipation on 8/20 s waveform P 350 350 500 W pp ESD per IEC 61000-4-2 (Air) V +/-30 +/-30 +/-15 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 +/-25 +/-8 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds) +260 (10 seconds) C L Operating junction temperature range T -55 to +125 -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STS321033U202 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 3.3 V (V) RWM Reverse breakdown voltage I = 1 mA 4 - - V (V) T BR Reverse leakage current V = 3.3 V - 1 5 I (A) RWM R Peak pulse current t = 8/20 s - - 25 I (A) p PP Clamping voltage I = 1 A, - 5.5 6.5 V (V) PP C t = 8/20 s p I = 25 A, - 10 15 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 200 250 C (pF) RWM J STS321050U182 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 6.0 - - V (V) T BR Reverse leakage current V = 5.0 V - 1 I (A) RWM R Clamping voltage I = 1 A, - - 9.0 V (V) PP C t = 8/20 s p I = 22 A, - 12 15 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 180 C (pF) RWM J STS321070U162 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 7 V (V) RWM Reverse breakdown voltage I = 1 mA 7.5 8.5 9 V (V) T BR Reverse leakage current V = 7 V - 0.1 0.5 I (A) RWM R Clamping voltage I = 1 A, - 11.5 15 V (V) PP C t = 8/20 s p I = 25 A, - 15.5 20 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 165 200 C (pF) RWM J 2 www.eaton.com/electronics