Product Information

EMB12P03G

Product Image X-ON

Datasheet
MOSFET P Channel 30V 13A 3V @ 250uA 10mO @ 13A,10V SOP8 RoHS
Manufacturer: EMC



Price (USD)

1: USD 0.401 ea
Line Total: USD 0.401

0 - Global Stock
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
0 - Global Stock


Ships to you between
Wed. 12 Apr to Mon. 17 Apr

MOQ : 1
Multiples : 1
1 : USD 0.401
10 : USD 0.324
30 : USD 0.2911
100 : USD 0.2499
500 : USD 0.2126
1000 : USD 0.2016

     
Manufacturer
EMC
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
SOP8
Brand Category
Emc
Fet Type
P Channel
Drain To Source Voltagevdss
30 V
Continuous Drain Current Id @ 25°C
13 A
Vgsth Max @ Id
3V @ 250uA
Rds On Max @ Id Vgs
10mO @ 13A,10V
Power Dissipation-Max Ta 25°C
2.5 W
Drain Source Voltage Vdss
30 V
Continuous Drain Current Id
13 A
Drain Source On Resistance Rdson@Vgs Id
10 mOhms @10V , 13A
Power Dissipation Pd
2.5 W
Gate Threshold Voltage Vgsth@Id
3 V @250uA
Type
P Channel
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EMB12P03G PChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: D BVDSS30V RDSON(MAX.)(VGS=10V) 10m ID13A G S UIS,Rg100%Tested PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 25 V GS T =25C 13 A ContinuousDrainCurrent I D T =100C10 A A 1 PulsedDrainCurrent I50 DM AvalancheCurrent I15 AS AvalancheEnergy L=0.1mH,ID=15A,RG=25 E 11.25 AS mJ 2 RepetitiveAvalancheEnergy L=0.05mH E 5.62 AR T =25C 2.5 A PowerDissipation P W D T =100C 1 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg 100%UIStestinginconditionofV =15V,L=0.1mH,V =10V,I =10A,RatedV =30VPCH D G L DS THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase R 25 JC C/W 3 JunctiontoAmbient R 50 JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 50C/Wwhenmountedona1in padof2ozcopper. 2012/12/17 p.1EMB12P03G ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) A LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 30 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 11.5 3 GS(th) DS GS D GateBodyLeakage I V =0V,V =25V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V1 A DSS DS GS V =20V,V =0V,T =125C 10 DS GS J 1 OnStateDrainCurrent I V =5V,V =10V13 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =10V,I =13A 8.2 10 DS(ON) GS D m V =4.5V,I =9A 12.5 16 GS D 1 ForwardTransconductance g V =5V,I =10A 30 S fs DS D DYNAMIC InputCapacitance C 3067 iss V =0V,V =15V,f=1MHz GS DS pF OutputCapacitance C 453 oss ReverseTransferCapacitance C 398 rss GateResistance R V =15mV,V =0V,f=1MHz 4.0 g GS DS 1,2 TotalGateCharge Q (V =10V) 52 g GS V =15V,V =10V, DS GS Q (V =4.5V) 23 g GS nC I =10A D 1,2 GateSourceCharge Q 6.5 gs 1,2 GateDrainCharge Q 10 gd 1,2 TurnOnDelayTime t 15 d(on) 1,2 RiseTime t V =15V, 12 r DS nS 1,2 TurnOffDelayTime t I =1A,V =10V,R =2.7 40 d(off) D GS GS 1,2 FallTime t 10 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 3 S A 3 PulsedCurrent I 12 SM 1 ForwardVoltage V I =I ,V =0V1.2 V SD F S GS ReverseRecoveryTime t I =I ,dl /dt=100A/ S 32 nS rr F S F ReverseRecoveryCharge Q 26 nC rr 1 Pulsetest:PulseWidth 300 sec,DutyCycle2. 2012/12/17 p.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
EMC
Excelliance MOS Co., Ltd.