EMB20N03V NChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: D BVDSS 30V RDSON(MAX.) 20m ID 12A G S UIS,Rg100%Tested PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) C PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 20 V GS T =25C 12 C ContinuousDrainCurrent I D T =100C 9 C A 1 PulsedDrainCurrent I 48 DM AvalancheCurrent I 8 AS AvalancheEnergy L=0.1mH,ID=8A,RG=25 E 3.2 AS mJ 2 RepetitiveAvalancheEnergy L=0.05mH E 1.6 AR T =25C 21 C PowerDissipation P W D T =100C 8.3 C T =25C 2.5 A PowerDissipation P W D T =100C 1 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase 6 R JC C/W 3 JunctiontoAmbient R 50 JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 50C/Wwhenmountedona1in padof2ozcopper. 2013/8/17 p.1EMB20N03V ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) C LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 30 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 1 1.5 3 GS(th) DS GS D GateBodyLeakage I V =0V,V =20V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V 1 A DSS DS GS V =20V,V =0V,T =125C 25 DS GS J 1 OnStateDrainCurrent I V =10V,V =10V 12 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =10V,I =8A 15.5 20 DS(ON) GS D m V =4.5V,I =6A 25 30 GS D 1 ForwardTransconductance g V =5V,I =8A 16 S fs DS D DYNAMIC InputCapacitance C 520 iss V =0V,V =15V,f=1MHz GS DS pF OutputCapacitance C 88 oss ReverseTransferCapacitance C 62 rss GateResistance R V =15mV,V =0V,f=1MHz 2.0 g GS DS 1,2 TotalGateCharge Q (V =10V) 11.5 g GS V =15V,V =10V, DS GS Q (V =4.5V) 5 g GS nC I =8A D 1,2 GateSourceCharge Q 1.6 gs 1,2 GateDrainCharge Q 2.8 gd 1,2 TurnOnDelayTime t 9 d(on) 1,2 RiseTime t V =15V, 12 r DS nS 1,2 TurnOffDelayTime t I =1A,V =10V,R =6 30 d(off) D GS GS 1,2 FallTime t 15 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 2.3 S A 3 PulsedCurrent I 9.2 SM 1 ForwardVoltage V I =I ,V =0V 1.2 V SD F S GS ReverseRecoveryTime t 45 nS rr PeakReverseRecoveryCurrent I I =I ,dl /dt=100A/ S 30 A RM(REC) F S F ReverseRecoveryCharge Q 2 nC rr 2013/8/17 p.2