Product Information

EMF50N03JS

Product Image X-ON

Datasheet
MOSFET N Channel 30V 3.5A 1.2V @ 250uA 50mO @ 3.5A,4.5V SOT23 RoHS
Manufacturer: EMC



Price (USD)

10: USD 0.1107 ea
Line Total: USD 1.107

0 - Global Stock
MOQ: 10 Multiples:10
Pack Size :   10
Availability Price Quantity
0 - Global Stock


Ships to you between
Wed. 12 Apr to Mon. 17 Apr

MOQ : 10
Multiples : 1
10 : USD 0.1107
100 : USD 0.0904
300 : USD 0.0801
3000 : USD 0.0642
6000 : USD 0.0581
9000 : USD 0.0551

     
Manufacturer
EMC
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
SOT23
Brand Category
Emc
Fet Type
N Channel
Drain To Source Voltagevdss
30 V
Continuous Drain Current Id @ 25°C
3.5 A
Vgsth Max @ Id
1.2V @ 250uA
Rds On Max @ Id Vgs
50mO @ 3.5A,4.5V
Power Dissipation-Max Ta 25°C
1.04 W
Drain Source Voltage Vdss
30 V
Continuous Drain Current Id
3.5 A
Power Dissipation Pd
1.04 W
Drain Source On Resistance Rdson@Vgs Id
50 mOhms @4.5V , 3.5A
Gate Threshold Voltage Vgsth@Id
1.2 V @250uA
Type
N Channel
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EMF50N03JS NChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: D BVDSS 30V RDSON(MAX.) 50m ID 3.5A G S PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 12 V GS T =25C 3.5 A ContinuousDrainCurrent I D T =70C 2.4 A A 1 PulsedDrainCurrent I 14 DM T =25C 1.04 A PowerDissipation P W D T =70C 0.66 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT R (T10sec) 83 JA 3 JunctiontoAmbient C/W 120 R (SteadyState) JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 Thedevicemountedona1in padof2ozcopper. 2015/10/19 p.1EMF50N03JS ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) J LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 30 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 0.45 0.75 1.2 GS(th) DS GS D GateBodyLeakage I V =0V,V =20V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V 1 A DSS DS GS V =20V,V =0V,T =125C 10 DS GS J 1 OnStateDrainCurrent I V =5V,V =10V 3.5 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =4.5V,I =3.5A 43 50 DS(ON) GS D m V =2.5V,I =2A 60 80 GS D 1 ForwardTransconductance g V =5V,I =3.5A 5 S fs DS D DYNAMIC InputCapacitance C 362 iss V =0V,V =10V,f=1MHz GS DS pF OutputCapacitance C 52 oss ReverseTransferCapacitance C 39 rss 1,2 TotalGateCharge Q 5.2 g 1,2 V =10V,V =4.5V, DS GS GateSourceCharge Q 1.5 gs nC I =3.5A D 1,2 GateDrainCharge Q 1.8 gd 1,2 TurnOnDelayTime t 8 d(on) 1,2 RiseTime t V =10V, 2.5 r DS nS 1,2 TurnOffDelayTime t I =1A,V =4.5V,R =6 20 d(off) D GS GS 1,2 FallTime t 5 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 2 S A 3 PulsedCurrent I 8 SM 1 ForwardVoltage V I =I ,V =0V 1.2 V SD F S GS 1 Pulsetest:PulseWidth 300 sec,DutyCycle2. 2 Independentofoperatingtemperature. 3 Pulsewidthlimitedbymaximumjunctiontemperature. 2015/10/19 p.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
EMC
Excelliance MOS Co., Ltd.