EMF50N03JS NChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: D BVDSS 30V RDSON(MAX.) 50m ID 3.5A G S PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 12 V GS T =25C 3.5 A ContinuousDrainCurrent I D T =70C 2.4 A A 1 PulsedDrainCurrent I 14 DM T =25C 1.04 A PowerDissipation P W D T =70C 0.66 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT R (T10sec) 83 JA 3 JunctiontoAmbient C/W 120 R (SteadyState) JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 Thedevicemountedona1in padof2ozcopper. 2015/10/19 p.1EMF50N03JS ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) J LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 30 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 0.45 0.75 1.2 GS(th) DS GS D GateBodyLeakage I V =0V,V =20V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V 1 A DSS DS GS V =20V,V =0V,T =125C 10 DS GS J 1 OnStateDrainCurrent I V =5V,V =10V 3.5 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =4.5V,I =3.5A 43 50 DS(ON) GS D m V =2.5V,I =2A 60 80 GS D 1 ForwardTransconductance g V =5V,I =3.5A 5 S fs DS D DYNAMIC InputCapacitance C 362 iss V =0V,V =10V,f=1MHz GS DS pF OutputCapacitance C 52 oss ReverseTransferCapacitance C 39 rss 1,2 TotalGateCharge Q 5.2 g 1,2 V =10V,V =4.5V, DS GS GateSourceCharge Q 1.5 gs nC I =3.5A D 1,2 GateDrainCharge Q 1.8 gd 1,2 TurnOnDelayTime t 8 d(on) 1,2 RiseTime t V =10V, 2.5 r DS nS 1,2 TurnOffDelayTime t I =1A,V =4.5V,R =6 20 d(off) D GS GS 1,2 FallTime t 5 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 2 S A 3 PulsedCurrent I 8 SM 1 ForwardVoltage V I =I ,V =0V 1.2 V SD F S GS 1 Pulsetest:PulseWidth 300 sec,DutyCycle2. 2 Independentofoperatingtemperature. 3 Pulsewidthlimitedbymaximumjunctiontemperature. 2015/10/19 p.2