P-C hannel Enhancement M o d e M O S F E T Formosa MS AS3423B Product Summary V R I (BR)DSS DS(on)MAX D 90m -4.5V -20V -3A 110m -2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23-3L Marking AS23 P-C hannel Enhancement M o d e M O S F E T Formosa MS AS3423B Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V -20 V DS Gate-Source Voltage V 10 V GS Continuous Drain Current I -3 A D Pulsed Drain Current I -10 A DM Power Dissipation P 1 W D Junction Temperature T 150 J Storage Temperature T -55 ~ +150 STG o Electrical characteristics (T =25 C, unless otherwise noted) A Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V V = 0V, I =-250A -20 V (BR)DSS GS D Zero gate voltage drain current I V =-16V,V = 0V -1 A DSS DS GS Gate-body leakage current I V =10V, V = 0V 100 nA GSS GS DS Gate threshold voltage V V =V , I =-250A -0.5 -1.5 V GS(th) DS GS D V =-4.5V, I =-3A 70 90 GS D 1) Drain-source on-resistance R m DS(on) V =-2.5V, I =-2A 90 110 GS D 2) Dynamic characteristics Input Capacitance C 500 iss V =-10V,V =0V,f =1MHz pF DS GS Output Capacitance C 100 oss Turn-on delay time t 10 d(on) V =-10V, I =-3A, R =6 nS DD D GEN Turn-off delay time t 60 d(off) Source-Drain Diode characteristics Diode Forward voltage V V =0V, I =-0.75A -1.5 V DS GS S Notes: 1) Pulse Test: Pulse Width < 300s, Duty Cycle 2%. 2) Guaranteed by design, not subject to production testing.