SI2301 Formosa

Name: SI2301
Brand: Formosa
SKU: SI2301_Formosa
Availability: OutOfStock
Rating: 5 (11 reviews)

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2301 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2301 MOSFETs are a product manufactured by Formosa. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI2301
Manufacturer:	Formosa
Category:	MOSFETs
Description:	MOSFET P Trench 20V 2.8A 1.5V @ 250uA 100 mÎ© @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
Datasheet:	SI2301 Datasheet (PDF)

Price (USD)

20: USD 0.0401 ea
Line Total: USD 0.8

Availability : 0

Qty	Unit Price
20	$ 0.0401
200	$ 0.0322
600	$ 0.0277
3000	$ 0.0222
9000	$ 0.0199
21000	$ 0.0187

SI2301 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Thu. 04 Sep to Tue. 09 Sep

MOQ : 20
Multiples : 20

Qty	Unit Price
20	$ 0.0401
200	$ 0.0322
600	$ 0.0277
3000	$ 0.0222
9000	$ 0.0199
21000	$ 0.0187

Specifications

Manufacturer Formosa Formosa
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)
Brand Category Formosa Formosa
Fet Type p trench p trench
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 2.8 A 2.8 A
Vgsth Max @ Id 1.5 V @ 250ua 1.5 V @ 250ua
Rds On Max @ Id Vgs 100 m @ 2.8a,4.5v 100 m @ 2.8a,4.5v
Power Dissipation-Max Ta 900 mW 900 mW
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 2.8 A 2.8 A
Drain Source On Resistance Rdson@Vgs Id 100 mOhms @4.5V , 2.8A 100 mOhms @4.5V , 2.8A
Power Dissipation Pd 900 mW 900 mW
Gate Threshold Voltage Vgsth@Id 1.5 V @250uA 1.5 V @250uA
Type P Channel P Channel

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We are delighted to provide the SI2301 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2301 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2301 MOSFET P Trench 20V 2.8A 1.5V @ 250uA 100 mÎ© @ 2.8A, 4.5V SOT-23 (SOT-23-3) is manufactured by Formosa. It is a top-of-the-line, aerospace grade, power stage FET with a maximum drain-source voltage of 20V and a continuous drain current of 2.8A. It has a P-channel extended Trench technology for low resistance and superior current handling capability. It also comes with an excellent body diode forward conduction of 4.5V, a fast switching time of 250uA, and a low RDSON of 100 mÎ© @ 2.8A. This FET is RoHS compliant and provides excellent performance in a wide range of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

FMS(Formosa Microsemi) may also be referenced as

Formosa Microsemi

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