GS-065-030-2-L-MR Gan Systems

GS-065-030-2-L 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Bottom-cooled, 8x8 mm PDFN package R = 50 m DS(on) I = 30 A DS(max) Simple gate drive requirements (0 V to 6 V) Top View Transient tolerant gate drive (-20 V / +10 V) High switching frequency (> 1 MHz) Fast and controllable fall and rise times Reverse conduction capability Zero reverse recovery loss Source Sense (SS) pin for optimized gate drive RoHS 3 (6+4) compliant Bottom View Applications Description Bridgeless Totem Pole PFC The GS-065-030-2-L is an enhancement mode GaN- Consumer, Industrial and Datacenter High on-Silicon power transistor. The properties of GaN Density Power Supply allow for high current, high voltage breakdown and High Power Adapters high switching frequency. GaN Systems innovates LED Lighting Drivers with industry leading advancements such as Appliance and Industrial Motor Drives patented Island Technology cell layout which Solar Inverter realizes high-current die and high yield. The GS-065- Uninterruptable Power Supplies 030-2-L is a bottom-side cooled transistor that offers Laser Drivers low junction-to-case thermal resistance for Wireless Power Transfer demanding high power applications. These features combine to provide very high efficiency power switching. Rev 210630 2009-2021 GaN Systems Inc. 1 Submit datasheet feedback GS-065-030-2-L 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (T = 25 C except as noted) case Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range TS -55 to +150 C Drain-to-Source Voltage V 650 V DS Drain-to-Source Voltage - transient (Note 1) V 850 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 30 A case DS Continuous Drain Current (T = 100 C) I 20 A case DS Pulse Drain Current (Pulse width 10 s, V = 6 V) (Note 2) I 60 A GS DS Pulse (1) For < 100 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 0.5 C / W JC Thermal Resistance (junction-to-ambient) (Note 3) R 35 C / W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad is 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper 2 layers under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Packing Reel Reel Ordering code Package type Qty method Diameter Width GS-065-030-2-L-TR 8x8 mm PDFN Tape-and-Reel 3000 13 (330 mm) 16 mm GS-065-030-2-L-MR 8x8 mm PDFN Mini-Reel 250 7 (180 mm ) 16 mm Rev 210630 2009-2021 GaN Systems Inc. 2 Submit datasheet feedback