GS66502B-TR Gan Systems

GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Bottom-side cooled configuration R = 200 m DS(on) I = 7.5 A DS(max) Ultra-low FOM die Low inductance GaNPX package Package Outline Circuit Symbol Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 5.0 x 6.6 mm PCB footprint RoHS3 (6 + 4) compliant Applications Description AC-DC Converters The GS66502B is an enhancement mode GaN-on- DC-DC converters silicon power transistor. The properties of GaN allow Uninterruptable Power Supplies for high current, high voltage breakdown and high Industrial Motor Drives switching frequency. GaN Systems innovates with Appliance Motor Drives industry leading advancements such as patented Fast Battery Charging Island Technology and GaNPX packaging. Island Class D Audio amplifiers Power Adapters Technology cell layout realizes high-current die and Wireless Power Transfer high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS66502B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 200402 2009-2020 GaN Systems Inc. 1 Submit datasheet feedback GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Drain-to-Source Voltage - transient (Note 1) V 750 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 7.5 A case DS Continuous Drain Current (T = 100 C) I 6.3 A case DS Pulse Drain Current (Pulse width 50 s, V = 6 V) (Note 2) I 15 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 2 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) R 31 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers under 2 the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS66502B-TR GaNPX Bottom-Side Cooled Tape-and-Reel 3000 13 (330mm) 16mm GS66502B-MR GaNPX Bottom-Side Cooled Mini-Reel 250 7 (180mm) 16mm Rev 200402 2009-2020 GaN Systems Inc. 2 Submit datasheet feedback