GS66508T-MR Gan Systems

GS66508T Top-side cooled 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Top-side cooled configuration R = 50 m DS(on) I = 30 A DS(max) Ultra-low FOM die Low inductance GaNPX package Circuit Symbol Package Outline Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 / +10V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 7.0 x 4.5 mm PCB footprint Dual gate pads for optimal board layout RoHS 3 (6+4) compliant The thermal pad is internally connected to Source (S pin 3) and substrate Description Applications AC-DC Converters The GS66508T is an enhancement mode GaN-on- DC-DC Converters silicon power transistor. The properties of GaN allow Bridgeless Totem Pole PFC for high current, high voltage breakdown and high Inverters switching frequency. GaN Systems innovates with Energy Storage Systems industry leading advancements such as patented On Board Battery Chargers Island Technology and GaNPX packaging. Island Uninterruptable Power Supplies Technology cell layout realizes high-current die and Solar Energy Industrial Motor Drives high yield. GaNPX packaging enables low inductance Appliances & low thermal resistance in a small package. The Laser Drivers GS66508T is a top-side cooled transistor that offers Wireless Power Transfer case thermal resistance for very low junction-to- demanding high power applications. These features combine to provide very high efficiency power switching. Rev 200402 2009-2020 GaN Systems Inc. 1 Submit datasheet feedback GS66508T Top-side cooled 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Transient Drain-to-Source Voltage (Note 1) V 750 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T =25 C) I 30 A case DS Continuous Drain Current (T =100 C) I 25 A case DS Pulse Drain Current (Pulse width 50 s, V = 6 V) (Note 2) I 60 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) top side R 0.5 C /W JC Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS66508T-TR GaNPX Top-Side Cooled Tape-and-Reel 3000 13 (330mm) 16mm GS66508T-MR GaNPX Top-Side Cooled Mini-Reel 250 7 (180mm) 16mm Rev 200402 2009-2020 GaN Systems Inc. 2 Submit datasheet feedback