GS66516B-MR Gan Systems

GS66516B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Bottom-side cooled configuration R = 25 m DS(on) I = 60 A DS(max) Ultra-low FOM die Low inductance GaNPX package Simple drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Package Outline Circuit Symbol Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 11 x 9 mm PCB footprint Source Sense (SS) pins for optimized gate drive Dual Gate Pins for optimal paralleling RoHS 3 (6 + 4) compliant Applications Description AC-DC Converters The GS66516B is an enhancement mode GaN on silicon DC-DC Converters power transistor. The properties of GaN allow for high Bridgeless Totem Pole PFC current, high voltage breakdown and high switching Inverters frequency. GaN Systems innovates with industry leading Energy Storage Systems advancements such as patented Island Technology and On Board Battery Chargers GaNPX packaging. Island Technology cell layout Uninterruptable Power Supplies realizes high-current die and high yield. GaNPX Solar Energy Industrial Motor Drives packaging enables low inductance & low thermal Laser Drivers resistance in a small package. The GS66516B is a bottom- Traction Drive side cooled transistor that offers very low junction-to-case Wireless Power Transfer thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 200402 2009-2020 GaN Systems Inc. 1 Submit datasheet feedback GS66516B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Transient Drain-to-Source Voltage (Note 1) V 750 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 60 A case DS Continuous Drain Current (T = 100 C) I 47 A case DS Pulse Drain Current (Pulse width 50 s, V = 6 V) (Note 2) I 120 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 0.27 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) R 23 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 2 mm pitch (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS66516B-TR GaNPX Bottom-Side Cooled Tape-and-Reel 3000 13 (330mm) 24mm GS66516B-MR GaNPX Bottom-Side Cooled Mini-Reel 250 7 (180mm) 24mm Rev 200402 2009-2020 GaN Systems Inc. 2 Submit datasheet feedback