Product Information

GBU8J

GBU8J electronic component of GeneSiC Semiconductor

Datasheet
GeneSiC Semiconductor Bridge Rectifiers 600V 8A Bridge Rectifier

Manufacturer: GeneSiC Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.127 ea
Line Total: USD 2.13

6088 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2545 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

GBU8J
GeneSiC Semiconductor

1 : USD 1.5295
10 : USD 1.0787
25 : USD 0.9464
100 : USD 0.7878
250 : USD 0.7038
500 : USD 0.6394
1000 : USD 0.5853
2500 : USD 0.5463
5000 : USD 0.5451

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Termination Style
If - Forward Current
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Ir - Reverse Current
Brand
Factory Pack Quantity :
Vr - Reverse Voltage
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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GBU8J thru GBU8M V = 600 V -1000 V RRM Single Phase Glass Passivated Silicon I = 8 A O Bridge Rectifier Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High case dielectric strength of 1500 V RMS Glass passivated chip junction GBU Package Ideal for printed circuit boards High surge overload rating High temperature soldering guaranteed: 260C/ 10 seconds, 0.375 (9.5mm) lead length Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Mounting position: Any Maximum ratings at Tc = 25 C, unless otherwise specified Parameter Symbol Conditions GBU8J GBU8K GBU8M V 1000 Repetitive peak reverse voltage 600 800 RRM RMS reverse voltage V 420 560 700 RMS V DC blocking voltage 600 800 1000 DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 j T -55 to 150 Storage temperature -55 to 150 -55 to 150 stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load. For capacitive load derate current by 20%. Conditions GBU8M Parameter Symbol GBU8J GBU8K Maximum average forward rectified T = 100 C I 8.0 8.0 8.0 O c 1,2 current t = 8.3 ms, half sine Peak forward surge current I 200 200 200 p FSM Maximum instantaneous forward V I = 8 A 1.1 1.1 1.1 F F voltage drop per leg T = 25 C 5 5 5 Maximum DC reverse current at a I R rated DC blocking voltage per leg T = 125 C 500 500 500 a 2 I t Rating for fusing t < 8.3 ms 166 166 166 Typical junction capacitance per leg C 94 94 94 j 3 R 21 21 21 JA 1,2 Typical thermal resistance per leg R 2.2 2.2 2.2 JL 1 - Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink 2 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal compond for maximum heat transfer using 6 screw. 3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V 1 Oct. 2018 GBU8J thru GBU8M V = 600 V -1000 V RRM GBU Package Maximum ratings at Tc = 25 C, unless otherwise specified Unit V V V C C Electrical characteristics at Tc = 25 C, unless otherwise specified Unit A A V A 2 A sec pF C/W 2 Oct. 2018

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMI
GENESIC SEMICONDUCTOR INC.

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