CS3N90A3H1-G Huajing

Name: CS3N90A3H1-G
Brand: Huajing
SKU: CS3N90A3H1G_Huajing
Availability: OutOfStock
Rating: 5 (11 reviews)

CS3N90A3H1-G electronic component of Huajing

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CS3N90A3H1-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. CS3N90A3H1-G MOSFETs are a product manufactured by Huajing. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	CS3N90A3H1-G
Manufacturer:	Huajing
Category:	MOSFETs
Description:	MOSFET N Trench 900V 3A (Tc) 4V @ 250uA 5.5 O @ 1.5A,10V TO-251 (I-PAK) RoHS
Datasheet:

Price (USD)

1: USD 0.4286 ea
Line Total: USD 0.43

Availability : 0

Qty	Unit Price
1	$ 0.4286
10	$ 0.3456
30	$ 0.3101
100	$ 0.2648
500	$ 0.2449
1000	$ 0.2331

CS3N90A3H1-G More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 19 Sep to Wed. 24 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.4286
10	$ 0.3456
30	$ 0.3101
100	$ 0.2648
500	$ 0.2449
1000	$ 0.2331

Specifications

Manufacturer Huajing Huajing
Product Category MOSFETs MOSFETs
Packaging Tube - Packed Tube - Packed
Brand Huajing Huajing
Rohs Y Y
Package TO - 251 (I - PAK) TO - 251 (I - PAK)
Fet Type N Channel N Channel
Drain To Source Voltagevdss 900 V 900 V
Continuous Drain Current Id @ 25°C 3 A (T C) 3 A (T C)
Vgsth Max @ Id 4V @ 250uA 4V @ 250uA
Rds On Max @ Id Vgs 5.5O @ 1.5A,10V 5.5O @ 1.5A,10V
Power Dissipation-Max Ta 25°C 75 W (Tc) 75 W (Tc)
Drain Source Voltage Vdss 900 V 900 V
Continuous Drain Current Id 3 A 3 A
Power Dissipation Pd 75 W 75 W
Drain Source On Resistance Rdson@Vgs Id 5.5 Ohms @10V , 1.5A 5.5 Ohms @10V , 1.5A
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the CS3N90A3H1-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CS3N90A3H1-G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The CS3N90A3H1-G is a MOSFET N Trench 900V 3A (Tc) 4V @ 250uA 5.5 O @ 1.5A, 10V TO-251 (I-PAK) RoHS manufactured by Huajing. This part is a metal oxide semiconductor field effect transistor (MOSFET), specifically designed to offer excellent performance in power switching applications. It features trench-gate architecture, resulting in low on-state resistance and reducing conduction losses. The device has a maximum drain to source voltage of 900V and a maximum drain current of 3A. The gate threshold voltage is 4V with a 250uA gate-source leakage current and drain-sourceOn voltage of 5.5O @ 1.5A. The part is packaged in a TO-251 (I-PAK) RoHS compliant package for enhanced reliability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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