CS4N65A3R Huajing

CS4N65A3R electronic component of Huajing
CS4N65A3R Huajing
CS4N65A3R MOSFETs
CS4N65A3R  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CS4N65A3R MOSFETs across the USA, India, Europe, Australia, and various other global locations. CS4N65A3R MOSFETs are a product manufactured by Huajing. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. CS4N65A3R
Manufacturer: Huajing
Category: MOSFETs
Description: MOSFET N Trench 650V 4A (Tc) 4V @ 250uA 2.8 O @ 2A,10V TO-251 (I-PAK) RoHS
Datasheet:
Price (USD)
1: USD 0.2269 ea
Line Total: USD 0.23 
Availability : 0
  
QtyUnit Price
1$ 0.2269
10$ 0.1828
30$ 0.164
100$ 0.1406
500$ 0.13
1000$ 0.1237

Availability 0
Ship by Mon. 22 Sep to Thu. 25 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2269
10$ 0.1828
30$ 0.164
100$ 0.1406
500$ 0.13
1000$ 0.1237

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CS4N65A3R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CS4N65A3R and other electronic components in the MOSFETs category and beyond.

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The Huajing CS4N65A3R is a MOSFET N Trench 650V 4A (Tc) 4V @ 250uA 2.8 O @ 2A,10V TO-251 (I-PAK) RoHS device. This electronic component is designed for power applications and has a maximum drain source voltage of 650 V and a continuous drain current of 4 A. It is a MOSFET N-channel with a low on drain state resistance of 2.8 ohm and the turn-on time is 250uA. It is designed for reliable operation and to meet thermal management requirements with is 10V TO-251 (I-PAK) RoHS package. It is suitable for various power applications, amplifiers, and switch mode power supplies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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