SMF1 0 N6 5 650V N- Channnel MO S FE T Fe a tur e s 1 0 . 0A , 6 5 0V , R = 0 . 80 V =1 0 V D S( on)(T yp ) G S L o w G a t e Ch a rge L o w C r ss 1 0 0% Ava la n ch e Te st e d Fa st S wit ch in g I m pro ve d d v/ d t Ca p ab ilit y Appl i c ati on : Hig h Fre qu e n cy S wit ch in g Mo d e P o we r S up p ly A ct ive P o we r Fa ct o r Co rre ct io n Ab s ol ute Ma x im um Ra ti ngs (T c=2 5 C u n le ss ot h e rwise n o t ed ) S ym b o l P a ra me te r V a lu e Un it V Dra in -S o urce V o lt age 6 5 0 V D SS 1 0. 0 * A Dra in Cu rre n t - Co n t in uo us (T c=2 5C ) I D - Co n tin u ou s( Tc=1 0 0 C) 6 . 0 * A I Dra in Cu rre n t -P u lse d ( N ot e1 ) 4 0 * A D M V G a te -S o urce V o lt age 3 0 V G SS E S in gle P u lse d A va la n ch e E n ergy 7 1 3 m J AS ( N ot e2) I A va la n ch e Cu rre n t ( N ot e1) 1 0 . 0 A AR E Re p et it ive A va la n ch e E n ergy ( N ot e1 ) 1 7 . 8 m J AR d v/ d t P e ak Dio d e Re co ve ry d v/ d t ( N ot e3) 4 . 5 V / n s 5 0 W P o we r Dissip a t io n(T =2 5 C) C P D -De ra t e a bo ve 2 5 C 0 . 4 W/ C T j O p era t in g Ju n ct ion Te mp e rat u re 1 5 0 C T stg S t ora ge Te mp era t u re Ra n ge -5 5 t o +15 0 C * Dr ain Cur r ent Lim it ed by Maxim um Junction Tem perat ure. The r m a l Cha r a cte r i s ti cs S ym b o l P a ra me te r Ma x Un it R Th e rma l Re sist a nce , Jun ct io n t o Ca se 2 . 5 J C C / W R Th e rma l Re sist a nce , Jun ct io n t o A mb ie n t 6 2 . 5 C / W J A H U A K E se m ic ond uc to r s 2 0 17 . 0 8 1/ 5 HK - W I- TD- 0 0 5 / B / 0SMF1 0 N6 5 650V N- Channnel MO S FE T E l e ctr i c a l Cha r a cte r i s ti cs(T c=2 5 C un le ss ot h e rwise n o t ed) S ym b o l P a ra me te r T est Co n d it on s Min Typ Ma x Un it O ff Cha r a cte r i sti c s B V Dr ain- source Br eakdown Volt age V = 0V , I = 250A 6 50 -- -- V D SS G S D BV I = 250A D SS Br eakdown Volt age Tem perat ure D -- 0 .7 -- V/ C /T Coef f icient ( Ref erenced t o 25C) J V = 650V, V = 0V -- -- 1 A D S G S I Zer o G ate Volt age Dr ain Cur r ent D SS V = 520V,Tc= 125C -- -- 1 0 A D S G at e- Body Leak age C ur r ent , F or w ar d V = + 30V, V = 0V I G S D S -- -- 1 0 0 n A G SSF I G at e- Body Leak age C ur r ent , R ev er s e V = - 30V, V = 0V -- -- - 100 n A G SSR G S D S O n Cha r a cte r i s ti cs V G ate Thr eshold Volt age V = V , I = 250A 2 . 0 -- 4 . 0 V G S(th) D S G S D St a t ic D r ain- Sour c e O n- R es is t anc e R VG S= 10 V, ID =5. 0A -- 0 .8 0 1 . 0 D S( on) V = 40 V, I = 5. 0A D S D g For war d Tr ansconduct ance -- 6 .2 -- S F S ( N ot e4 ) Dyn a m i c Cha r a c ter i s ti cs 113 2 C I nput Capacit ance -- -- p F is s V = 25V, V = 0V, D S G S C O utput Capacit ance -- 1 3 5 -- p F os s f =1. 0MH z Rever se Tr ansf er Capacit ance C -- 2 0 -- p F r ss S w itc hi ng Cha r a c ter i s ti cs t Tur n- On Delay Tim e -- 3 3 -- n s d( on) t Tur n- On Rise Tim e -- 6 0 -- n s r V = 325 V, I = 10 A, D D D R = 25 ( N ot e4, 5 ) G Tur n- Of f Delay Tim e t -- 5 9 -- n s d( off) Tur n- Of f Fall Tim e t -- 3 9 -- n s f Q Tot al Gat e Char ge -- 1 9 . 4 -- n C g VD S = 520 V, I D =10 A, Q G ate- Source Char ge -- 6 . 2 6 -- n C gs V = 10 V ( N ot e4 , 5) G S Q G ate- Drain Char ge -- 6 . 5 5 -- n C gd Dr a i n-S our c e Di ode Cha r a cte r i s ti cs a nd Ma x im um Ra ti ngs Maxim um Cont inuous Dr ain- Sour ce Diode For war d Cur r ent I -- -- 1 0 A S I Maxim um Pulsed Dr ain- Source Diode For war d Cur r ent -- -- 4 0 A SM V D r ain - Sour c e D io de F or w ar d Vol t ag e V = 0V,I = 10. 0A -- -- 1 .3 V SD G S S t Rever se Recover y Tim e -- 4 2 5 -- n s rr V = 0V, I = 10. 0A , G S S d I / dt= 100A/s ( N ot e4) F Q Rever se Recover y Char ge -- 4 . 3 1 -- C r r N ot e s : 1 R epe t it i v e R at in g: P ul s e W idt h Lim it ed by M ax im um J unc t i on T em per at ur e . 2 L = 14. 5 m H , I = 10. 0 A, V = 50V , R = 25 , St ar t i ng T = 25C . AS DD G J 3 I 10. 0 A, di/ dt 200A / s , V BV St a r t ing T = 25 C . SD DD DSS, J 4 Pul s e T es t : Pul s e W idt h 300 s , D ut y C yc le 2% . 5 Es s ent i all y I nde pen den t of O per at i ng T em per at ur e . H U A K E se m ic ond uc to r s 2 0 17 . 0 8 2/ 5 HK - W I- TD- 0 0 5 / B / 0