HSCB2012 HUASHUO

Name: HSCB2012
Brand: HUASHUO
SKU: HSCB2012_HUASHUO
Availability: OutOfStock
Rating: 5 (11 reviews)

HSCB2012 electronic component of HUASHUO

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HSCB2012 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HSCB2012 MOSFETs are a product manufactured by HUASHUO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	HSCB2012
Manufacturer:	HUASHUO
Category:	MOSFETs
Description:	MOSFET N Channel 20V 12A 0.9V @ 250uA 15mΩ @ 12A,4.5V DFN2x2-6L RoHS
Datasheet:

Price (USD)

5: USD 0.1225 ea
Line Total: USD 0.61

Availability : 0

Qty	Unit Price
5	$ 0.1225
50	$ 0.1014
150	$ 0.0861
500	$ 0.0734
2500	$ 0.0713
5000	$ 0.0702

HSCB2012 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 26 Sep to Thu. 02 Oct

MOQ : 5
Multiples : 5

Qty	Unit Price
5	$ 0.1225
50	$ 0.1014
150	$ 0.0861
500	$ 0.0734
2500	$ 0.0713
5000	$ 0.0702

Specifications

Manufacturer HUASHUO HUASHUO
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package DFN2X2 - 6L DFN2X2 - 6L
Brand Category Huashuo Huashuo
Fet Type n channel n channel
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 12 A 12 A
Vgsth Max @ Id 0.9 V @ 250ua 0.9 V @ 250ua
Rds On Max @ Id Vgs 15m? @ 12a,4.5v 15m? @ 12a,4.5v
Power Dissipation-Max Ta 25°C 3.3 W 3.3 W
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 12 A 12 A
Power Dissipation Pd 3.3 W 3.3 W
Drain Source On Resistance Rdson@Vgs Id 15 mOhms @4.5V , 12A 15 mOhms @4.5V , 12A
Gate Threshold Voltage Vgsth@Id 900 mV @250uA 900 mV @250uA
Type N Channel N Channel

We are delighted to provide the HSCB2012 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HSCB2012 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HSCB2012 MOSFET N Channel 20V 12A 0.9V @ 250uA 15mO @ 12A,4.5V DFN2x2-6L RoHS manufactured by HUASHUO is a compact, low Vce (sat) MOSFET that has maximum ratings of 20 V, 12 A, 0.9 V, and 250 µA. It features a low RDS(on) of 15 mO at a gate source voltage of 4.5 V, at a drain source current of up to 12 A. Its package is a DFN2x2-6L RoHS package. The part is ideal for load switch, linear regulator and Class D audio applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUASHUO may also be referenced as

Huashuo Semiconductor

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