The HSM0026 from HUASHUO is an N-channel MOSFET in 8-pin SOP-8 RoHS and with enhanced parameters. It features maximum drain to source voltage rating of 100V, drain current of 7.5A, gate to source voltage rating of 2.5V at 250uA and drain-source on-state resistance of 20mO at 7A and 10V. Its maximum operating temperature is 175°C and the device is designed for general-purpose power switching applications. It has fast switching speed, low gate threshold voltage and low on-state resistance. It is best suited for DC to DC power conversion, load switching, current sensing, over voltage protection and circulates. Additionally, It is provided with an improved Rds(on) by DTMOS structure, offers a low-VGS gate drive which reduces the gate drive power.