PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C V = 600V CES Features V = 1.95V G CE(on) typ. UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, E V = 15V, I = 12A GE C >200 kHz in resonant mode n-channel 2 Industry standard D Pak & TO-262 package Lead-Free, RoHS Compliant Automotive Qualified * Benefits 2 D Pak TO-262 Typical Applications: SMPS, PFC AUIRG4BC30U-S AUIRG4BC30U-SL GC E Gate Collector Emitter Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25 C, unless otherwise A specified Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 23 C C I T = 100C Continuous Collector Current 12 A C C I Pulsed Collector Current 92 CM I Clamped Inductive Load Current 92 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 10 mJ ARV P T = 25C Maximum Power Dissipation 100 D C P T = 100C Maximum Power Dissipation 42 D C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.2 C/W JC R Junction-to-Ambient, ( PCB Mounted,steady-state)** 40 JA * * When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. * Qualification standards can be found at AUIRG4BC30U-S/SL Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V / T Temperature Coeff. of Breakdown Voltage 0.63 V/C V = 0V, I = 1.0mA (BR)CES J GE C 1.95 2.1 I = 12A V = 15V C GE V Collector-to-Emitter Saturation Voltage 2.52 I = 23A See Fig.2, 5 C CE(ON) 2.09 I = 12A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V / T Temperature Coeff. of Threshold Voltage -13 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 3.1 8.6 S V = 100V, I = 12A fe CE C 250 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current CES 2.0 V = 0V, V = 10V, T = 25C GE CE J 1000 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Static or Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 50 75 I = 12A g C Q Gate - Emitter Charge (turn-on) 8.1 12 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 18 27 V = 15V gc GE t Turn-On Delay Time 17 d(on) t Rise Time 9.6 T = 25C r J t Turn-Off Delay Time 78 120 I = 12A, V = 480V d(off) C CC t Fall Time 97 150 V = 15V, R = 23 f GE G E Turn-On Switching Loss 0.16 Energy losses includetai on E Turn-Off Switching Loss 0.20 mJ See Fig. 10, 11, 13, 14 off E Total Switching Loss 0.36 0.50 ts t Turn-On Delay Time 20 T = 150C, d(on) J t Rise Time 13 I = 12A, V = 480V r C CC t Turn-Off Delay Time 180 V = 15V, R = 23 d(off) GE G t Fall Time 140 Energy losses includetai f E Total Switching Loss 0.73 mJ See Fig. 13, 14 ts L Internal Source Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 1100 V = 0V ies GE C Output Capacitance 73 pF V = 30V See Fig.7 oes CC C Reverse Transfer Capacitance 14 = 1.0MHz res Repetitive rating V = 20V, pulse width limited by GE max. junction temperature. ( See fig. 13b ) Pulse width 80s duty factor 0.1% V = 80%(V ), V = 20V, L = 10H, R = 23 CC CES GE G (See fig. 13a) Pulse width 5.0s, single shot. Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com