X-On Electronics has gained recognition as a prominent supplier of AUIRGP4066D1-E IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. AUIRGP4066D1-E IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

AUIRGP4066D1-E Infineon

AUIRGP4066D1-E electronic component of Infineon
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Part No.AUIRGP4066D1-E
Manufacturer: Infineon
Category: IGBT Transistors
Description: International Rectifier IGBT Transistors 600V co-pack Auto Trench IGBT
Datasheet: AUIRGP4066D1-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 10.9901
10 : USD 9.9963
100 : USD 8.9905
250 : USD 8.6724
500 : USD 8.3337
1000 : USD 8.2208
2500 : USD 7.8924
5000 : USD 7.5845
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 15.467
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AUIRGP4066D1-E from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AUIRGP4066D1-E and other electronic components in the IGBT Transistors category and beyond.

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INSULATED GATE BIPOLAR TRANSISTOR WITH C V = 600V CES ULTRAFAST SOFT RECOVERY DIODE Features I = 75A C(Nominal) Low V Trench IGBT Technology CE (ON) Low switching losses G t 5s, T = 175C SC J(max) Maximum Junction temperature 175 C 5 S short circuit SOA E V typ. = 1.70V Square RBSOA CE(on) n-channel 100% of the parts tested for 4X rated current (I ) LM Positive V Temperature Coefficient CE (ON) C Soft Recovery Co-Pak Diode C Tight parameter distribution Lead-Free, RoHS Compliant E Automotive Qualified * C E G Benefits C G High Efficiency in a wide range of applications TO-247AC TO-247AD Suitable for a wide range of switching frequencies due to AUIRGP4066D1 AUIRGP4066D1-E Low V and Low Switching losses CE (ON) Rugged transient Performance for increased reliability G C E Excellent Current sharing in parallel operation Gate Collector Emitter Low EMI Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRGP4066D1 TO-247AC Tube 25 AUIRGP4066D1 AUIRGP4066D1-E TO-247AD Tube 25 AUIRGP4066D1-E Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25 C, unless otherwise specified. A Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES 140 I T = 25C Continuous Collector Current C C I T = 100C Continuous Collector Current 90 C C I Nominal Current 75 NOMINAL Pulse Collector Current V = 15V I 225 CM GE Clamped Inductive Load Current V = 20V I 300 A LM GE Diode Nominal Current 75 I F NOMINAL Diode Maximum Forward Current I 300 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 454 W D C P T = 100C Maximum Power Dissipation 227 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) R (IGBT) 0.33 C/W JC Thermal Resistance Junction-to-Case-(each Diode) R (Diode) 0.53 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA *Qualification standards can be found at Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V 600 V V = 0V, I = 200A (BR)CES Collector-to-Emitter Breakdown Voltage GE C V /T (BR)CES J 0.30 V/CV = 0V, I = 15mA (25C-175C) T emperature Coeff. of Breakdown Voltage GE C 1.70 2.1 I = 75A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.0 V I = 75A, V = 15V, T = 150C CE(on) C GE J 2.1 I = 75A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 2.1mA GE(th) CE GE C /TJ Threshold Voltage temp. coefficient -13 mV/C V = V , I = 20mA (25C - 175C) VGE( t h) CE GE C gfe Forward Transconductance 50 S V = 50V, I = 75A, PW = 25s CE C I Collector-to-Emitter Leakage Current 3.0 200 AV = 0V, V = 600V CES GE CE 10 mAV = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 1.60 1.77 V I = 75A FM F 1.54 I = 75A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 150 225 I = 75A g C Q Gate-to-Emitter Charge (turn-on) 40 60 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 60 90 V = 400V gc CC E Turn-On Switching Loss 4240 5190 I = 75A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 2170 3060 JR = 10 , L = 100H, T = 25C off G J E Total Switching Loss 6410 8250 E nergy loss es include tail & diode reverse recovery total t Turn-On delay time 50 70 I = 75A, V = 400V, V = 15V d(on) C CC GE t Rise time 80 100 ns R = 10, L = 100H r G t Turn-Off delay time 200 230 TJ = 25C d(off) t Fall time 60 80 f E Turn-On Switching Loss 6210 I = 75A, V = 400V, V =15V on C CC GE E Turn-Off Switching Loss 2815 JR =10, L=100H, T = 175C off G J E Total Switching Loss 9025 E nergy loss es include tail & diode reverse recovery total t Turn-On delay time 45 I = 75A, V = 400V, V =15V d(on) C CC GE t Rise time 70 ns R =10 , L=100H r G t Turn-Off delay time 240 T = 175C d(off) J t Fall time 80 f C Input Capacitance 4470 V = 0V ies GE pF C Output Capacitance 350 V = 30V oes CC C Reverse Transfer Capacitance 140 f = 1.0Mhz res T = 175C, I = 300A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 10, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area V = 400V, Vp 600V CC 5 s Rg = 10, V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 680 JT = 175C J t Diode Reverse Recovery Time 240 ns V = 400V, I = 75A rr CC F I Peak Reverse Recovery Current 50 A V = 15V, Rg = 10, L =100H rr GE Notes: V = 80% (V ), V = 20V, L = 100 H, R = 50, tested in production I 400A. CC CES GE G LM Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 120A. Package diode current limit is120A. Note that current limitations arising from heating of the device leads may occur.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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