BAR9002ELSE6327XTSA1 Infineon

BAR90-02ELS Single silicon RF PIN Diode Product description This Infineon RF PIN diode provides high-voltage handling capabilities and comes with low loss and low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design and support designers in creating smaller and lighter end-solutions. Feature list Very low capacitance C = 0.21 pF (typical) at voltage V = 0 V and frequency f = 1 GHz R Low forward resistance R = 1.7 (typical) at I = 3 mA and frequency f = 100 MHz F F Balanced ON / OFF mode harmonic distortion TSSLP-2-3 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Optimized for low bias current RF and high-speed interface switches in: Set-top boxes, digital media players Laptop and desktop PCs Device information Table 1 Part information Product name / Ordering code Package Pin Marking Pieces / Reel configuration BAR90-02ELS / BAR9002ELSE6327XTSA1 TSSLP-2-3 Single, leadless J 15 k underscore Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v1.0 www.infineon.com 2018-06-30BAR90-02ELS Single silicon RF PIN Diode Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 2 2 Electrical performance in test fixture 3 2.1 DC characteristics . 3 2.2 AC characteristics 4 3 Thermal characteristics . 8 4 Package information TSSLP-2-3 10 5 References 11 Revision history . 11 Disclaimer 12 1 Absolute maximum ratings Table 2 Absolute maximum ratings at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit Note or test condition Min. Max. Diode reverse voltage V 80 V R Forward current I 100 mA F 1) Total power dissipation P 150 mW T 136C TOT S Junction temperature T 150 C J Operating temperature T -55 125 OP Storage temperature T -55 150 STG Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 T is the soldering point temperature. S Datasheet 2 v1.0 2018-06-30