BAS 125-04W H6327 Infineon

BAS125... Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS125-04W BAS125-05W BAS125-06W BAS125-07W ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Configuration L (nH) Marking S BAS125-04W SOT323 series 1.4 14s BAS125-05W SOT323 common cathode 1.4 15s BAS125-06W SOT323 common anode 1.4 16s BAS125-07W SOT343 parallel pair 1.6 17s Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 25 V Diode reverse voltage V R 100 mA Forward current I F 500 Non-repetitive peak surge forward current I FSM mW Total power dissipation P tot BAS125-04W, BAS125-06W, T 84C 250 S BAS125-05W, T 76C 250 S BAS125-07W, T 96C 250 S 150 C Junction temperature T j Storage temperature T -55 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-19BAS125... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAS125-04W, BAS125-06W 365 BAS125-05W 295 BAS125-07W 215 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 20 V - - 100 R V = 25 V - - 150 R mV Forward voltage V F I = 1 mA - 385 400 F I = 10 mA - 530 650 F I = 35 mA - 800 950 F 2) - - 20 Forward voltage matching V F I = 10 mA F AC Characteristics - - 1.1 pF Diode capacitance C T V = 0 , f = 1 MHz R Differential forward resistance R - 15 - F I = 5 mA, f = 10 kHz F 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 V is the difference between lowest and highest V in a multiple diode component. F F 2 2007-04-19