X-On Electronics has gained recognition as a prominent supplier of BAT 17-04W H6327 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAT 17-04W H6327 Diodes - General Purpose, Power, Switching are a product manufactured by Infineon. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAT 17-04W H6327 Infineon

BAT 17-04W H6327 electronic component of Infineon
BAT 17-04W H6327 Infineon
BAT 17-04W H6327 Diodes - General Purpose, Power, Switching
BAT 17-04W H6327  Semiconductors

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See Product Specifications
Part No. BAT 17-04W H6327
Manufacturer: Infineon
Category: Diodes - General Purpose, Power, Switching
Description: Infineon Technologies Diodes - General Purpose, Power, Switching RF DIODE
Datasheet: BAT 17-04W H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4225 ea
Line Total: USD 0.42 
Availability - 8115
Ship by Fri. 04 Jul to Tue. 08 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8115
Ship by Fri. 04 Jul to Tue. 08 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4225
10 : USD 0.2887
100 : USD 0.1824
500 : USD 0.1298
1000 : USD 0.11
3000 : USD 0.0935
6000 : USD 0.0869
9000 : USD 0.0825

9700
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ : 3522
Multiples : 1
3522 : USD 0.1331
10000 : USD 0.1188
100000 : USD 0.0995

14530
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ : 1047
Multiples : 1
1047 : USD 0.2485
1086 : USD 0.2396
1122 : USD 0.2318
2500 : USD 0.2163
5000 : USD 0.2105
10000 : USD 0.2054

   
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We are delighted to provide the BAT 17-04W H6327 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAT 17-04W H6327 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAT17-04W Series silicon RF Schottky diode pair Product description These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz. Feature list Low inductance L = 1.4 nH (typical) s Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm) Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers and detectors in: Wearables Smart metering Telematic systems Set top boxes Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAT17-04W / BAT1704WH6327XTSA1 SOT323-3 Series pair 54s 3 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com 2018-06-30BAT17-04W Series silicon RF Schottky diode pair Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 2 2 Electrical performance in test fixture 3 2.1 Electrical characteristics . 3 2.2 Characteristic curves .4 3 Thermal characteristics . 6 4 Package information SOT323-3 8 Revision history 9 Disclaimer 10 1 Absolute maximum ratings Table 2 Absolute maximum ratings at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit Note or test condition Min. Max. Diode reverse voltage V 4 V R Forward current I 130 mA F 1) Total power dissipation P 150 mW T 100 C TOT S Junction temperature T 150 C J Operating temperature T -55 125 OP Storage temperature T -55 150 STG Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 T is the soldering point temperature. S Datasheet 2 2018-06-30

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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