BAT 63-02V H6327 Infineon

BAT63... Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies For high-speed applications Zero bias detector diode Pb-free (RoHS compliant) package BAT63-02V BAT63-07W ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Configuration L (nH) Marking S BAT63-02V SC79 single 0.6 d BAT63-07W SOT343 parallel pair 1.6 63s Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 3 V Diode reverse voltage V R 100 mA Forward current I F mW Total power dissipation P tot T 120C, BAT63-02V 100 S T 114C, BAT63-07W 100 S 150 C Junction temperature T j Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAT63-02V 295 BAT63-07W 355 2011-06-15 1BAT63... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics - - 10 Reverse current I A R V = 3 V R - 190 300 mV Forward voltage V F I = 1 mA F 2) - - 20 Forward voltage matching V F I = 1 mA F AC Characteristics - 0.65 0.85 pF Diode capacitance C T V = 0.2 V, f = 1 MHz R - 30 - Differential resistance R k 0 V = 0 , f = 10 kHz R 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 V is the difference between lowest and highest V in a multiple diode component. F F 2011-06-15 2