BBY51... Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO s in mobile communications equipment Pb-free (RoHS compliant) package BBY51-02L BBY51 BBY51-02V BBY51-02W BBY51-03W Type Package Configuration Marking BBY51 SOT23 common cathode S3s BBY51-02L TSLP-2-1 single, leadless II BBY51-02V SC79 single f BBY51-02W* SCD80 single II BBY51-03W SOD323 single white H * Not for new design Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 7 V Diode reverse voltage V R 20 mA Forward current I F C Operating temperature range T -55 ...125 op Storage temperature T -55 ...150 stg 2014-02-11 1BBY51... Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 6 V - - 10 R V = 6 V, T = 85 C - - 200 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 5.05 5.4 5.75 R V = 2 V, f = 1 MHz 3.4 4.2 5.2 R V = 3 V, f = 1 MHz 2.7 3.5 4.6 R V = 4 V, f = 1 MHz 2.5 3.1 3.7 R 1.55 1.75 2.2 Capacitance ratio C /C T1 T4 V = 1 V, V = 4 V, f = 1 MHz R R 1.4 1.78 2.2 pF Capacitance difference C -C 1V 3V V = 1 V, V = 3 V, f = 1 MHZ R R 0.3 0.5 0.7 Capacitance difference C -C 3V 4V V = 3 V, V = 4 V, f = 1 MHZ R R Series resistance r - 0.37 - S V = 1 V, f = 1 GHz R 2014-02-11 2