X-On Electronics has gained recognition as a prominent supplier of BFP196E6327HTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFP196E6327HTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFP196E6327HTSA1 Infineon

BFP196E6327HTSA1 electronic component of Infineon
BFP196E6327HTSA1 Infineon
BFP196E6327HTSA1 RF Bipolar Transistors
BFP196E6327HTSA1  Semiconductors

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See Product Specifications
Part No. BFP196E6327HTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet: BFP196E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1316: USD 0.1976 ea
Line Total: USD 260.04 
Availability - 2734
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ: 1316  Multiples: 1
Pack Size: 1
Availability Price Quantity
2734
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 1316
Multiples : 1
1316 : USD 0.1976
1755 : USD 0.1482
1924 : USD 0.1352
2025 : USD 0.1285
2289 : USD 0.1136
2337 : USD 0.1113
2916 : USD 0.0892

97
Ship by Tue. 01 Jul to Fri. 04 Jul
MOQ : 5
Multiples : 5
5 : USD 0.3816
50 : USD 0.2952
150 : USD 0.1935
500 : USD 0.1429
3000 : USD 0.1291
6000 : USD 0.1207

   
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Maximum Operating Temperature
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Automotive Qualification Standard
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFP196E6327HTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP196E6327HTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFP196 Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA Power amplifier for DECT and PCN systems f = 7.5 GHz, NF = 1.3 dB at 900 MHz T min Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 150 mA Collector current I C 15 Base current I B 1) 700 mW Total power dissipation P tot T 77C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 105 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 1 2014-04-04BFP196 Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 50 mA, V = 8 V, pulse measured C CE 2 2014-04-04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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