BFS 481 H6327 Infineon

BFS481 Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at 4 collector currents from 0.5 mA to 12 mA 5 3 6 2 1 f = 8 GHz, NF = 0.9 dB at 900 MHz T min Two (galvanic) internal isolated Transistors in one package For orientation in reel see package information below Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads Qualification report according to AEC-Q101 available C1 E2 B2 6 54 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFS481 RFs 1=B 2=E 3=C 4=B 5=E 6=C SOT363 1 2013-06-18BFS481 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 12 V Collector-emitter voltage V CEO 20 Collector-emitter voltage V CES 20 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 20 mA Collector current I C 2 Base current I B 1) 175 mW Total power dissipation P tot T 83 C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 380 thJS Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 12 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 100 A Collector-emitter cutoff current I CES V = 20 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 10 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 70 100 140 - DC current gain h FE I = 5 mA, V = 8 V, pulse measured C CE 1 T is measured on the collector lead at the soldering point of the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2 2013-06-18