Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY15B101N 1-Mbit (64K 16) Automotive F-RAM 1-Mbit (64K 16) Automotive F-RAM 44-pin thin small outline package (TSOP) Type II Features Restriction of hazardous substances (RoHS)-compliant 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64K 16 Functional Description Configurable as 128K 8 using UB and LB 14 High-endurance 100 trillion (10 ) read/writes The CY15B101N is a 64K 16 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random 151-year data retention (See Data Retention and Endurance on page 7) access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for NoDelay writes over 151 years while eliminating the reliability concerns, Page-mode operation for 30-ns cycle time functional disadvantages, and system design complexities of Advanced high-reliability ferroelectric process battery-backed SRAM (BBSRAM). Fast write-timing and high SRAM compatible write-endurance make the F-RAM superior to other types of Industry-standard 64K 16 SRAM pinout memory. 60-ns access time, 90-ns cycle time The CY15B101N operation is similar to that of other RAM devices, and, therefore, it can be used as a drop-in replacement Superior to battery-backed SRAM modules for a standard SRAM in a system. Read cycles may be triggered No battery concerns by CE or simply by changing the address and write cycles may Monolithic reliability be triggered by CE or WE. The F-RAM memory is nonvolatile True surface-mount solution, no rework steps due to its unique ferroelectric memory process. These features Superior for moisture, shock, and vibration make the CY15B101N ideal for nonvolatile memory applications Low power consumption requiring frequent or rapid writes. Active current 7 mA (typ) The device is available in a 400-mil, 44-pin TSOP-II Standby current 120 A (typ) surface-mount package. Device specifications are guaranteed over the Automotive-A temperature range 40 C to +85 C. Low-voltage operation: V = 2.0 V to 3.6 V DD For a complete list of related resources, click here. Automotive-A temperature: 40 C to +85 C Logic Block Diagram 64K x 16 block A 15-2 A F-RAM Array 15-0 A 1-0 . CE Column Decoder WE DQ 15-0 Control I/O Latch & Bus Driver UB, LB Logic OE ZZ Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-96058 Rev. *F Revised December 21, 2018 Address Latch & Write Protect Block & Row Decoder .