DD241S12K-K Infineon

DD241S12K-K electronic component of Infineon Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DD241S12K-K Rectifiers across the USA, India, Europe, Australia, and various other global locations. DD241S12K-K Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

Part No. DD241S12K-K
Manufacturer: Infineon
Category: Rectifiers
Description: Rectifiers Rectifier Diode 1200V 240A
Datasheet: DD241S12K-K Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 202.4316
5$ 199.4454
10$ 199.4454
25$ 199.4454
100$ 199.4328
250$ 189.819
N/A

Obsolete
   
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We are delighted to provide the DD241S12K-K from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DD241S12K-K and other electronic components in the Rectifiers category and beyond.

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European Power- Semiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 241 S 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998DD 241 S Elektrische Eigenschaften Electrical properties Hchstzulssige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage t = -40C...t V DD 241 S: 1000 1200 1400 V vj vj max RRM t = +25C...t V = V Stospitzenspannung non-repetitive peak reverse voltage + 50 V vj vj max RSM RRM Durchlastrom-Grenzeffektivwert RMS forward current I 410 A FRMSM Dauergrenzstrom average forward current t = 100C I 240 A c FAVM t = 94C 261 A c Stostrom-Grenzwert surge current t 25C, t = 10 ms I 9300 A vj p FSM t = t , t = 10 ms 7500 A vj vj max p 2 2 2 t 25C, t = 10 ms Grenzlastintegral I t-value I t 432000 A s vj p 2 t = t , t = 10 ms 281000 A s vj vj max p Charakteristische Werte Characteristic values Durchlaspannung forward voltage t = t , i = 800 A v max. 1,55 V vj vj max F F V Schleusenspannung threshold voltage 1,1 V (TO) r Ersatzwiderstand slope resistance 0,5 m T t = t , v = V i Sperrstrom reverse current max. 200 mA vj vj max R RRM R Rckstromspitze peak reverse recovery current t = t , i = 250 A, I vj vj max FM RM -di /dt = 100 A/s max. 135 A F Sperrverzugsladung recovered charge t = t , i = 250 A Q vj vj max FM r -di /dt = 100 A/s max. 250 As F V Isolations-Prfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 3 kV ISOL Thermische Eigenschaften Thermal properties Innerer Wrmewiderstand thermal resistance, junction R max. 0,075 C/W =180el. sin: pro Modul/per module thJC to case pro Zweig/per arm max. 0,15 C/W DC: pro Modul/per module max. 0,072 C/W pro Zweig/per arm max. 0,144 C/W R bergangs-Wrmewiderstand thermal resistance, case to heatsink pro Modul/per module max. 0,02 C/W thCK pro Zweig/per arm max. 0,04 C/W t Hchstzul.Sperrschichttemperatur max. junction temperature 150 C vj max Betriebstemperatur operating temperature t -40...+150 C c op Lagertemperatur storage temperature t -40...+150 C stg Mechanische Eigenschaften Mechanical properties Si-Elemente mit Druckkontakt Si-pellets with pressure contact Innere Isolation internal insulation AIN Anzugsdrehmomente tightening torques mechanische Befestigung mounting torque Toleranz/tolerance +/- 15% M1 6 Nm elektrische Anschlsse terminal connection torque Toleranz/tolerance +5%/-10% M2 12 Nm Gewicht weight G typ. 800 g Kriechstrecke creepage distance 17 mm Schwingfestigkeit vibration resistance f = 50 Hz 5 9,81 m/s Mabild outline 8 DD 241 S kann auch mit gemeinsamer Anode oder gemeinsamer Kathode geliefert werden. DD 241 S can also be supplied with common anode or common cathode.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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