FF600R12IP4 PrimePACK2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1200V CES IC nom = 600A / ICRM = 1200A Potentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Motorantriebe Motor drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit High short-circuit capability Hohe Stostromfestigkeit High surge current capability Hohe Stromdichte High current density T = 150C T = 150C vj op vj op V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor RoHS konform RoHS compliant Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2020-08-17FF600R12IP4 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TC = 100C, Tvj max = 175C ICDC 600 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 600 A Tvj = 25C 1,70 2,05 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,00 2,45 V GE vj CE sat Tvj = 150C 2,10 2,55 V Gate-Schwellenspannung IC = 23,0 mA, VCE = VGE, Tvj = 25C VGEth 5,00 5,80 6,50 V Gate threshold voltage Gateladung V = -15 / 15 V Q 4,40 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,8 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 37,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,05 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,21 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,24 s GE vj R = 2,2 T = 150C 0,24 s Gon vj Anstiegszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,12 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,12 s GE vj R = 2,2 T = 150C 0,13 s Gon vj Abschaltverzgerungszeit, induktive Last I = 600 A, V = 600 V T = 25C 0,70 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,80 s GE vj R = 2,2 T = 150C 0,85 s Goff vj Fallzeit, induktive Last I = 600 A, V = 600 V T = 25C 0,15 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,20 s GE vj R = 2,2 T = 150C 0,20 s Goff vj Einschaltverlustenergie pro Puls I = 600 A, V = 600 V, L = 45 nH T = 25C 52,0 mJ C CE vj Turn-on energy loss per pulse di/dt = 3800 A/s (T = 150C) T = 125C E 77,0 mJ vj vj on V = -15 / 15 V, R = 2,2 T = 150C 83,0 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 600 A, V = 600 V, L = 45 nH T = 25C 81,0 mJ C CE vj Turn-off energy loss per pulse du/dt = 3100 V/s (T = 150C) T = 125C E 105 mJ vj vj off V = -15 / 15 V, R = 2,2 T = 150C 115 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 2400 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 45,0 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 14,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2020-08-17