IGP50N60TXKSA1 Infineon

IGP50N60TXKSA1 electronic component of Infineon
IGP50N60TXKSA1 Infineon
IGP50N60TXKSA1 IGBT Transistors
IGP50N60TXKSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IGP50N60TXKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGP50N60TXKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IGP50N60TXKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-220AB
Datasheet: IGP50N60TXKSA1 Datasheet (PDF)
Price (USD)
1: USD 4.3125 ea
Line Total: USD 4.31 
Availability : 2198
  
Ship by Mon. 24 Nov to Wed. 26 Nov
QtyUnit Price
1$ 4.3125
10$ 2.5415
100$ 1.969
500$ 1.837
1000$ 1.738
2500$ 1.683

Availability 194
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 51
Multiples : 1
QtyUnit Price
51$ 5.1766
97$ 2.6819
107$ 2.4362
500$ 1.9262
1000$ 1.7612


Availability 1455
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.9238
1000$ 1.7312
2500$ 1.7137


Availability 2198
Ship by Mon. 24 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.3125
10$ 2.5415
100$ 1.969
500$ 1.837
1000$ 1.738
2500$ 1.683


Availability 194
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 51
Multiples : 1
QtyUnit Price
51$ 5.1766


Availability 8376
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 216
Multiples : 1
QtyUnit Price
216$ 2.1719
500$ 2.0469
1000$ 1.9375
10000$ 1.8281


Availability 1455
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.9238
1000$ 1.7312
2500$ 1.7137

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Tradename
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGP50N60TXKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGP50N60TXKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IGP50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology C Features: Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C G Short circuit withstand time 5 s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications PG-TO220-3 offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low V CE(sat) Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGP50N60T TRENCHSTOP Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.45 K/W t h J C junction case Thermal resistance, R 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =50A C E ( s a t ) GE C T =25 C - 1.5 2.0 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =0.8mA,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 3500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =50A - 31 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 3140 - pF i s s CE V =0V, Output capacitance C - 200 - o s s GE f=1MHz Reverse transfer capacitance C - 93 - r s s Gate charge Q V =480V, I =50A - 310 - nC G a t e CC C V =15V GE Internal emitter inductance L PG-TO-220-3-1 - 7 - nH E measured 5mm (0.197 in.) from case PG-TO-247-3-21 - 13 - 1) Short circuit collector current I V =15V,t 5 s - 458.3 - A C ( S C ) GE SC V = 400V, C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.8 19.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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