IKB06N60T TRENCHSTOP Series p Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features Very low V 1.5V (typ.) C CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5 s Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners G E TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Low EMI 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant PG-TO263-3 Complete product spectrum and PSpice Models : IKB06N60T TRENCHSTOP Series p Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.7 K/W t h J C junction case Diode thermal resistance, R 2.6 t h J C D junction case Thermal resistance, R 62 t h J A junction ambient Thermal resistance, R Footprint 65 t h J A junction ambient 6cm Cu 40 Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, 600 - - V ( B R ) C E S G E I =0.25mA C Collector-emitter saturation voltage V V = 15V, I =6A C E ( s a t ) G E C - 1.5 2.05 T =25 C j - 1.8 T =175 C j Diode forward voltage V V =0V, I =6A F G E F T =25 C - 1.6 2.05 j - 1.6 - T =175 C j V I =0.18mA, Gate-emitter threshold voltage 4.1 4.6 5.7 G E ( t h) C V =V C E G E Zero gate voltage collector current I V =600V, A C E S C E V =0V G E - - 40 T =25 C j - - 700 T =175 C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =6A - 3.6 - S f s C E C Integrated gate resistor R none G i n t Dynamic Characteristic C V =25V, Input capacitance - 368 - pF i s s C E V =0V, Output capacitance C G E - 28 - o s s C f=1MHz Reverse transfer capacitance - 11 - r s s Q V =480V, I =6A Gate charge - 42 - nC G a t e C C C V =15V G E Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) I Short circuit collector current V =15V,t 5 s - 55 - A C ( S C ) G E S C V = 400V, C C T = 25 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.5 20.09.2013 IFAG IPC TD VLS