PD - 95781 IRG4BC15UD-SPbF IRG4BC15UD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features V = 600V CES UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching V = 2.02V CE(on) typ. IGBT Co-packaged with ultra-soft-recovery G antiparallel diode 2 Industry standard D Pak & TO-262 packages V = 15V, I = 7.8A GE C E Lead-Free n-channel Benefits Best Value for Appliance and Industrial Applications High noise immunePositive Onl gate drive- Negative bias gate drive not necessary For Low EMI designs- requires little or no snubbing Single Package switch for bridge circuit applications Compatible with high voltage Gate Driver IC s Allows simpler gate drive 2 D Pak TO-262 IRG4BC15UD-S IRG4BC15UD-L Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 14 C C I T = 100C Continuous Collector Current 7.8 C C I Pulsed Collector Current 42 A CM I Clamped Inductive Load Current 42 LM I T = 100C Diode Continuous Forward Current 4.0 F C I Diode Maximum Forward Current 16 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 49 D C P T = 100C Maximum Power Dissipation 19 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT 2.7 JC R Junction-to-Case - Diode 7.0 C/W JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient, typical socket mount 80 JA R Junction-to-Ambient (PCB Mount, steady state) 40 JA Wt Weight 2 (0.07) g (oz) www.irf.com 1 08/27/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.63 V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 2.02 2.4 I = 7.8A V = 15V CE(on) C GE 2.56 V I = 14A C 2.21 I = 7.8A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -10 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 4.1 6.2 S V = 100V, I = 7.8A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1400 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.5 1.8 V I = 4.0A FM C 1.4 1.7 I = 4.0A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 23 35 I = 7.8A g C Qge Gate - Emitter Charge (turn-on) 4.0 6.0 nC V = 400V CC Q Gate - Collector Charge (turn-on) 9.6 14 V = 15V gc GE t Turn-On Delay Time 17 T = 25C d(on) J t Rise Time 20 ns I = 7.8A, V = 480V r C CC t Turn-Off Delay Time 160 240 V = 15V, R = 75 d(off) GE G t Fall Time 83 120 Energy losses includetai and f E Turn-On Switching Loss 0.24 diode reverse recovery. on E Turn-Off Switching Loss 0.26 mJ off E Total Switching Loss 0.50 0.63 ts t Turn-On Delay Time 16 T = 150C, d(on) J t Rise Time 21 ns I = 7.8A, V = 480V r C CC t Turn-Off Delay Time 180 V = 15V, R = 75 d(off) GE G t Fall Time 220 Energy losses includetai and f E Total Switching Loss 0.76 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 410 V = 0V ies GE C Output Capacitance 37 pF V = 30V oes CC C Reverse Transfer Capacitance 5.3 = 1.0MHz res t Diode Reverse Recovery Time 28 42 ns T = 25C rr J 38 57 T = 125C I = 4.0A J F I Diode Peak Reverse Recovery Current 2.9 5.2 A T = 25C rr J 3.7 6.7 T = 125C V = 200V J R Q Diode Reverse Recovery Charge 40 60 nC T = 25C rr J 70 110 T = 125C di/dt 200A/s J di /dt Diode Peak Rate of Fall of Recovery 280 A/s T = 25C (rec)M J During t 240 T = 125C b J