PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
55 W, 869 960 MHz
Description
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs PTFA080551E
designed for EDGE and CDMA power amplifier applications in the Package H-36265-2
869 to 960 MHz band. Features include input matching and thermally-
enhanced packages with slotted or earless flanges. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability. PTFA080551F
Package H-37265-2
Features
Three-carrier CDMA2000 Performance
V = 28 V, I = 450 m A, = 960 MHz
DD DQ
Broadband internal matching
Typical EDGE performance
- Average output power = 26 W
40 -35
- Gain = 18 dB
35 Efficiency - Efficiency = 44%
-40
Typical CW performance
30
-45
- Output power at P1dB = 75 W
25
- Gain = 17 dB
-50
ACP Low
- Efficiency = 67%
20
-55
ACP Up
Integrated ESD protection: Human Body Model,
15
Class 2 (minimum)
-60
10
ALT Up
Excellent thermal stability, low HCI drift
-65
5
Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
0 -70
Pb-free and RoHS compliant
29 31 33 35 37 39 41 43
Output Power, Avg. (dBm)
RF Characteristics
EDGE Measurements (not subject to production testverified by design/characterization in Infineon test fixture)
V = 28 V, I = 450 mA, P = 26 W AVG, = 959.8 MHz
DD DQ OUT
Characteristic Symbol Min Typ Max Unit
Error Vector Magnitude EVM (RMS) 2.5 %
Modulation Spectrum @ 400 kHz ACPR 60 dBc
Modulation Spectrum @ 600 kHz ACPR 75 dBc
Gain G 18 dB
ps
Drain Efficiency 44 %
D
All published data at T = 25C unless otherwise indicated
CASE *See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive deviceobserve handling precautions!
Data Sheet 1 of 11 Rev. 04, 2009-03-31
Drain Efficiency (%)
Adj. Ch. Power Ratio (dBc)PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V = 28 V, I = 600 mA, P = 55 W PEP, = 960 MHz, tone spacing = 1 MHz
DD DQ OUT
Characteristic Symbol Min Typ Max Unit
Gain G 18 18.5 dB
ps
Drain Efficiency 46.5 48 %
D
Intermodulation Distortion IMD 31 29 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V = 0 V, I = 10 A V 65 V
GS DS (BR)DSS
Drain Leakage Current V = 28 V, V = 0 V I 1.0 A
DS GS DSS
V = 63 V, V = 0 V I 10.0 A
DS GS DSS
On-State Resistance V = 10 V, V = 0.1 V R 0.15 V
GS DS DS(on)
Operating Gate Voltage V = 28 V, I = 450 mA V 2.0 2.3 3.0 V
DS DQ GS
Gate Leakage Current V = 10 V, V = 0 V I 1.0 A
GS DS GSS
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V 65 V
DSS
Gate-Source Voltage V 0.5 to +12 V
GS
Junction Temperature T 200 C
J
Total Device Dissipation P 219 W
D
Above 25C derate by 1.25 W/C
Storage Temperature Range T 40 to +150 C
STG
Thermal Resistance (T = 70C) R 0.8 C/W
CASE JC
Ordering Information
Type and Version Package Outline Package Description Shipping Marking
PTFA080551E V4 H-36265-2 Thermally-enhanced, Tray PTFA080551E
slotted flange, single-ended
PTFA080551F V4 H-37265-2 Thermally-enhanced, Tray PTFA080551F
earless flange, single-ended
*See Infineon distributor for future availability.
Data Sheet 2 of 11 Rev. 04, 2009-03-31