RU207C N-Channel Advanced Power MOSFET Features Pin Description 20V/6A, R =10m (Typ.) V =4.5V DS (ON) GS R =15m (Typ.) V =2.5V DS (ON) GS Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) SOT23-3 Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T =25C Unless Otherwise Noted) A V Drain-Source Voltage 20 DSS V V Gate-Source Voltage 12 GSS T Maximum Junction Temperature 150 C J T Storage Temperature Range -55 to 150 C STG I Diode Continuous Forward Current T =25C 1.7 A S A Mounted on Large Heat Sink 300 s Pulse Drain Current Tested T =25C 24 A A I DP T =25C 6 A Continuous Drain Current(V =4.5V) A I GS D T =70C 4.5 A T =25C 1.25 A P Maximum Power Dissipation W D T =70C 0.75 A R Thermal Resistance-Junction to Case -C/W JC Thermal Resistance-Junction to Ambient 100 C/W R JA Drain-Source Avalanche Ratings Avalanche Energy, Single Pulsed TBD mJ E AS Ruichips Semiconductor Co., Ltd Rev. C AUG., 2015 1 www.ruichips.comRU207C Electrical Characteristics (T =25C Unless Otherwise Noted) A RU207C Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BV V =0V, I =250A Drain-Source Breakdown Voltage 20 V DSS GS DS V =20V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =125C 30 J V =V , I =250A V Gate Threshold Voltage 0.5 0.7 1.5 V DS GS DS GS(th) V =10V, V =0V I Gate Leakage Current 100 nA GS DS GSS V =4.5V, I =6A 10 13 m GS DS Drain-Source On-state Resistance R DS(ON) V =2.5V, I =5A 15 18 m GS DS Diode Characteristics I =1A, V =0V Diode Forward Voltage 1 V SD GS V SD trr Reverse Recovery Time 15 ns ISD=1A, dlSD/dt=100A/s Qrr Reverse Recovery Charge 8 nC Dynamic Characteristics R V =0V,V =0V,F=1MHz Gate Resistance 1.5 G GS DS V =0V, C Input Capacitance GS 590 iss V =10V, DS C pF Output Capacitance 125 oss Frequency=1.0MHz C Reverse Transfer Capacitance 90 rss t Turn-on Delay Time 8 d(ON) t Turn-on Rise Time 15 r V =10V, I =6A, DD DS ns V =4.5V,R =6 GEN G t Turn-off Delay Time 33 d(OFF) t Turn-off Fall Time 13 f Gate Charge Characteristics Q Total Gate Charge 10 g V =16V, V =4.5V, DS GS Q nC Gate-Source Charge 1.6 gs I =6A DS Q Gate-Drain Charge 3.4 gd Notes: Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. When mounted on 1 inch square copper board, t10sec. The value in any given application depends on the user s specific board design. Limited by T Starting T = 25C. Jmax. J Pulse test Pulse width300s, duty cycle2%. Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. C AUG., 2015 2 www.ruichips.com