Product Information

IS46TR16640ED-15HBLA1

IS46TR16640ED-15HBLA1 electronic component of ISSI

Datasheet
DRAM 1333MT/s 64MX16 DDR3 SDRAM with ECC

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

138: USD 6.9721 ea
Line Total: USD 962.15

0 - Global Stock
MOQ: 138  Multiples: 138
Pack Size: 138
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 190
Multiples : 190
190 : USD 8.1569

0 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 190
Multiples : 190
190 : USD 7.5325
570 : USD 7.314
1140 : USD 7.1415
2660 : USD 7.061
5130 : USD 7.0265

0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 138
Multiples : 138
138 : USD 6.9721

     
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RoHS - XON
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IS43/46TR16640ED IS43/46TR81280ED 128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC MARCH 2018 FEATURES Refresh Interval: Standard Voltage: VDD and VDDQ = 1.5V 0.075V 7.8 s (8192 cycles/64 ms) Tc= -40C to 85C High speed data transfer rates with system 3.9 s (8192 cycles/32 ms) Tc= 85C to 105C frequency up to 800 MHz 1.95 s (8192 cycles/16ms)Tc=105C to 125C 8 internal banks for concurrent operation Partial Array Self Refresh 8n-bit pre-fetch architecture Asynchronous RESET pin Programmable CAS Latency TDQS (Termination Data Strobe) supported (x8 Programmable Additive Latency: 0, CL-1,CL-2 only) Programmable CAS WRITE latency (CWL) based OCD (Off-Chip Driver Impedance Adjustment) on tCK Dynamic ODT (On-Die Termination) Programmable Burst Length: 4 and 8 Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) Programmable Burst Sequence: Sequential or Interleave Write Leveling BL switch on the fly Operating temperature: Automotive, A1 (TC = -40C to +95C) Auto Self Refresh(ASR) Automotive, A2 (T = -40C to +105C) C Self Refresh Temperature(SRT) Automotive, A3 (TC= -40C to +125C) ECC Single bit error correction (per 64-bits) ADDRESS TABLE Restrictions on Burst Length and Data Mask Parameter 128Mx8 64Mx16 Row Addressing A0-A13 A0-A12 OPTIONS Configuration: Column Addressing A0-A9 A0-A9 128Mx8 Bank Addressing BA0-2 BA0-2 64Mx16 Page size 1KB 2KB Package: Auto Precharge Addressing A10/AP A10/AP 96-ball FBGA (9mm x 13mm) for x16 BL switch on the fly A12/BC A12/BC 78-ball FBGA (8mm x 10.5mm) for x8 SPEED BIN Speed Option 15H 125K Units JEDEC Speed Grade DDR3-1333H DDR3-1600K CL-nRCD-nRP 9-9-9 11-11-11 tCK tRCD,tRP(min) 13.5 13.75 ns Note: Faster speed options may be backward compatible to slower speed options. Refer to timing tables (8.3) Copyright 2018 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B1 03/12/2018 IS43/46TR16640ED IS43/46TR81280ED 1. DDR3 PACKAGE BALLOUT 1.1 DDR3 SDRAM package ballout 78-ball FBGA x8 1 2 3 4 5 6 7 8 9 A VSS VDD NC NU/TDQS VSS VDD B VSS VSSQ DQ0 DM/TDQS VSSQ VDDQ C VDDQ DQ2 DQS DQ1 DQ3 VSSQ D VSSQ DQ6 DQS VDD VSS VSSQ E VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ 1 F NC VSS RAS CK VSS NC G ODT VDD CAS CK VDD CKE H NC CS WE A10/AP ZQ NC J VSS BA0 BA2 NC(A15) VREFCA VSS K VDD A3 A0 A12/BC BA1 VDD L VSS A5 A2 A1 A4 VSS M VDD A7 A9 A11 A6 VDD N VSS RESET A13 NC(A14) A8 VSS Note: NC balls have no internal connection. NC(A14) and NC(A15) are one of NC pins and reserved for higher densities. 1.2 DDR3 SDRAM package ballout 96-ball FBGA x16 1 2 3 4 5 6 7 8 9 A VDDQ DQU5 DQU7 DQU4 VDDQ VSS B VSSQ VDD VSS DQSU DQU6 VSSQ C VDDQ DQU3 DQU1 DQSU DQU2 VDDQ D VSSQ VDDQ DMU DQU0 VSSQ VDD E VSS VSSQ DQL0 DML VSSQ VDDQ F VDDQ DQL2 DQSL DQL1 DQL3 VSSQ G VSSQ DQL6 DQSL VDD VSS VSSQ H VREFDQ VDDQ DQL4 DQL7 DQL5 VDDQ J NC VSS RAS CK VSS NC K ODT VDD CAS CK VDD CKE L NC CS WE A10/AP ZQ NC M VSS BA0 BA2 NC(A15) VREFCA VSS N VDD A3 A0 A12/BC BA1 VDD P VSS A5 A2 A1 A4 VSS R VDD A7 A9 A11 A6 VDD T VSS RESET NC(A13) NC(A14) A8 VSS Note: NC balls have no internal connection. NC(A13), NC(A14) and NC(A15) are one of NC pins and reserved for higher densities. Integrated Silicon Solution, Inc. www.issi.com 2 Rev. B1 03/12/2018

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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