DMA10P1600HR V = 2x1600 V RRM Standard Rectifier I = 10 A FAV V = 1.18 V F Phase leg Part number DMA10P1600HR Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISO247 Planar passivated chips Diode for main rectification Isolation Voltage: V~ 3600 Very low leakage current For single and three phase Industry standard outline Very low forward voltage drop bridge configurations RoHS compliant Improved thermal behaviour Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c 2019 IXYS all rights reservedDMA10P1600HR Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1600 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 6 0 0 V T = 25C 10 A R VJ R V = 1 6 0 0 V T = 1 5 0 C 0.2 mA R VJ forward voltage drop V I = 1 0 A T = 25C 1.23 V F F VJ I = 2 0 A 1.46 V F T = C 1.18 V I = 1 0 A 150 F VJ I = 2 0 A 1.49 V F average forward current T = 1 4 5 C T = 1 7 5 C 10 A I FAV C VJ rectangular V T = 1 7 5 C 0.81 V threshold voltage F0 VJ for power loss calculation only slope resistance r 34 m F thermal resistance junction to case 2 K/W R thJC thermal resistance case to heatsink K/W R 0.3 thCH P total power dissipation T = 25C 75 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 120 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 130 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 100 VJ t = 8,3 ms (60 Hz), sine V = 0 V 110 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 72 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 70 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 50 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 50 As R V = 4 0 0 V f = 1 MHz T = 25C 4 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191128c 2019 IXYS all rights reserved