DS2-12A IXYS

DS2-12A electronic component of IXYS
DS2-12A IXYS
DS2-12A Diodes - General Purpose, Power, Switching
DS2-12A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DS2-12A Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. DS2-12A Diodes - General Purpose, Power, Switching are a product manufactured by IXYS. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No.DS2-12A
Manufacturer:IXYS
Category:Diodes - General Purpose, Power, Switching
Description:IXYS Diodes - General Purpose, Power, Switching 2 Amps 1200V
Datasheet:DS2-12A Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 8.4264
10$ 7.5434
20$ 6.5758
50$ 6.2752
100$ 6.1718
200$ 5.5707
500$ 4.6287
1000$ 4.4237
2000$ 4.3042
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the DS2-12A from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DS2-12A and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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DS 2 DSA 2 V = 1200-1800 V Recti er Diode RRM I = 7 A Avalanche Diode Type Replacement F(RMS) I = 3.6 A DS2-12A DSA1-12D F(AV)M DSA2-12A DSA1-12D DSA2-16A DSA1-16D DSA2-18A DSA1-18D C V V V Standard Avalanche A C RSM (BR)min RRM V V V Types Types A 1300 1300 1200 DS 2-12A DSA 2-12A 1700 1750 1600 DSA 2-16A 1900 1950 1800 DSA 2-18A A = Anode C = Cathode Only for Avalanche Diodes Symbol Test Conditions Maximum Ratings Features International standard package I T = T 7 A F(RMS) VJ VJM Axial wire connexions I T = 45C R = 30 K/W 180 sine 3.6 A F(AV)M amb thJA Planar glassivated chips T = 45C R = 115 K/W 180 sine 1.2 A amb thJA Applications P DSA types, T = 25C, t = 10 s 2.5 kW RSM VJ p Low power recti ers I T = 45C t = 10 ms (50 Hz), sine 120 A FSM VJ Field supply for DC motors V = 0 t = 8.3 ms (60 Hz), sine 127 A R Power supplies T = T t = 10 ms (50 Hz), sine 100 A High voltage recti ers VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 106 A R Advantages 2 2 I t T = 45C t = 10 ms (50 Hz), sine 72 A s VJ Space and weight savings 2 V = 0 t = 8.3 ms (60 Hz), sine 68 A s R Simple PCB mounting 2 T = T t = 10 ms (50 Hz), sine 50 A s Improved temperature and power VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 47 A s cycling R Reduced protection circuits T 180 C VJM T -40...+180 C VJ T -40...+180 C Dimensions in mm (1 mm = 0.0394 ) stg Weight 2.4 g C Symbol Test Conditions Characteristic Values I T = 180C V = V 2 mA R VJ R RRM V I = 7 A T = 25C 1.25 V F F VJ V For power-loss calculations only 0.85 V T0 r T = T 43 m T VJ VJM R Forced air cooling with 1.5 m/s, T = 45C 30 K/W thJA amb Soldered between 2 cooling ns, T = 45C 37 K/W amb Soldered onto PC board (25 mm), T = 45C 75 K/W amb Free air cooling, T = 45C 115 K/W amb d Creepage distance on surface 2.25 mm S d Strike distance through air 2.25 mm A 2 a Max. allowable acceleration 100 m/s Data according to IEC 60747 A IXYS reserves the right to change limits, test conditions and dimensions 20190130b 1 - 2 2019 IXYS All rights reserved phase-outDS 2 DSA 2 10 100 100 2 V = 0 V A s A A R typ. lim. 80 8 80 60 T = 180C 2 VJ I t I I F FSM T = 25C VJ T =45C VJ 40 6 60 50Hz, 80%V RRM T = 45C VJ T = 180C T =180C VJ VJ 4 40 20 2 20 0 0 10 -3 -2 -1 0 1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 10 10 10 10 10 1 2 3 4 5 6 7 m8 s910 V s V t t F 2 Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) I : crest value, t: duration FSM W W 10 10 8 8 P P F F R : thJA 6 6 30 K/W 37 K/W 45 K/W 75 K/W 4 4 115 K/W DC 180 sin 120 2 2 60 30 0 0 0 1 2 3 4 5 6 7 8 9 A 0 20 40 60 80 100 120 140 160C I T FAVM amb Fig. 4 Power dissipation versus forward current and ambient temperature 100 R for various conduction angles d: thJA C/W d R (K/W) thJA 80 DC 75 Z (th)t 180 75.7 120 76.1 60 60 76.7 30 77.4 40 Constants for Z calculation: thJA i R (K/W) t (s) thi i 20 1 0.15 0.001 2 10.85 0.1 3 64 35 0 -3 -2 -1 0 1 2 3 4 s 10 10 10 10 10 10 10 10 t Fig. 5 Transient thermal impedance junction to ambient IXYS reserves the right to change limits, test conditions and dimensions 20190130b 2 - 2 2019 IXYS All rights reserved phase-out

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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