The IXBT12N300HV with IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT is a very high voltage insulated gate bipolar transistor (IGBT) manufactured by IXYS. It is designed for high-speed switching applications, providing superior dynamic performance. It features a high maximum blocking voltage of up to 1200 V, a low on-state resistance for high conduction current, and a high current carrying capability for maximum power dissipation. The IXBT12N300HV also provides excellent dV/dt and dI/dt capability, making it suitable for high-current and high-voltage applications. It also features low gate drive power requirements and low power dissipation, allowing it to be used in systems with low energy consumption. A wide range of packages are available, making the IXBT12N300HV suitable for many different applications.