Preliminary Technical Information High Voltage, High Gain V = 2500V IXBH2N250 CES TM BIMOSFET IXBT2N250 I = 2A C110 V 3.80V Monolithic Bipolar MOS CE(sat) Transistor TO-268 (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 150C 2500 V CES C V T = 25C to 150C, R = 1M 2500 V TO-247 (IXBH) CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 5 A C25 C G I T = 110C 2 A C C110 C C (Tab) E I T = 25C, 1ms 13 A CM C SSOA V = 15V, T = 125C, R = 47 I = 6 A G = Gate D = Drain GE VJ G CM S = Source Tab = Drain (RBSOA) Clamped Inductive Load V 2000 V CE P T = 25C 32 W C C G = Gate C = Collector T -55 ... +150 C J E = Emitter Tab = Collector T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Blocking Voltage M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d Integrated Anti-parallel Diode Weight TO-247 6 g International Standard Packages TO-268 4 g Low Conduction Losses Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Low Gate Drive Requirement High Power Density BV I = 250A, V = V 2500 V CES C CE GE V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE Applications I V = 0.8 V , V = 0V 10 A CES CE CES GE T = 125C 100 A J Switched-Mode and Resonant-Mode I V = 0V, V = 20V 100 nA Power Supplies GES CE GE Uninterruptible Power Supplies (UPS) V I = 2A, V = 15V, Note 1 3.15 3.80 V CE(sat) C GE Laser Generator T = 125C 4.08 V J Capacitor Discharge Circuit AC Switches 2017 IXYS CORPORATION, All Rights Reserved DS100160A(8/17) IXBH2N250 IXBT2N250 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 2A, V = 10V, Note 1 0.85 1.40 S fS C CE C 145 pF ies V = 25V, V = 0V, f = 1MHz 8.7 pF C oes CE GE C 3.2 pF res Q 10.6 nC g Q I = 2A, V = 15V, V = 1kV 0.8 nC ge C GE CE Pins: 1 - Gate Q 6.2 nC gc 2,4 - Collector 3 - Emitter t 30 ns d(on) Resistive Switching times, T = 25C J t 180 ns r I = 2A, V = 15V C GE t 70 ns d(off) V = 2kV, R = 47 CE G t 182 ns f t 30 ns d(on) Resistive Switching times, T = 125C J t 280 ns r I = 2A, V = 15V C GE t 74 ns d(off) V = 2kV, R = 47 CE G t 178 ns f R 3.90 C/W thJC R 0.21 C/W thCS TO-247 Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 2A, V = 0V, Note 1 2.4 V F F GE Pins: 1 - Gate t 0.92 s 2,4 - Collector rr I = 2A, V = 0V, -di /dt = 100A/s 3 - Emitter F GE F I 9.80 A RM V = 100V, V = 0V R GE Q 4.50 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537