IXGH 32N170A V = 1700 V High Voltage CES IXGT 32N170A I = 32 A C25 IGBT V = 5.0 V CE(sat) t = 50 ns fi(typ) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) V T = 25C to 150C 1700 V CES J V T = 25C to 150C R = 1 M 1700 V CGR J GE G V Continuous 20 V GES E C (TAB) V Transient 30 V GEM I T = 25C32A C25 C TO-247 AD (IXGH) I T = 90C21A C90 C I T = 25C, 1 ms 110 A CM C SSOA V = 15 V, T = 125C, R = 5 I = 70 A GE VJ G CM C (TAB) (RBSOA) Clamped inductive load 0.8 V G CES C E t T = 125C, V = 1200 V V = 15 V, R = 10 10 s SC J CE GE G G = Gate, C = Collector, E = Emitter, TAB = Collector P T = 25C 350 W C C T -55 ... +150 C J Features T 150 C JM z International standard packages T -55 ... +150 C stg JEDEC TO-268 and JEDEC TO-247 AD M Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. d z High current handling capability z MOS Gate turn-on Maximum lead temperature for soldering 300 C - drive simplicity 1.6 mm (0.062 in.) from case for 10 s z Rugged NPT structure Weight TO-247 6 g z Molding epoxies meet UL 94 V-0 TO-268 4 g flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control Symbol Test Conditions Characteristic Values z DC servo and robot drives (T = 25C, unless otherwise specified) J z min. typ. max. DC choppers z Uninterruptible power supplies (UPS) BV I = 250 A, V = 0 V 1700 V z CES C GE Switched-mode and resonant-mode V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE power supplies I V = 0.8 V T = 25C50 A CES CE CES J V = 0 V Note 1 T = 125C2mA GE J Advantages z High power density I V = 0 V, V = 20 V 100 nA GES CE GE z Suitable for surface mounting z V I = I , V = 15 V T = 25C 4.0 5.0 V Easy to mount with 1 screw, CE(sat) C C90 GE J T = 125C 4.8 V (isolated mounting screw hole) J DS98942D(09/04) 2004 IXYS All rights reservedIXGH 32N170A IXGT 32N170A Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V 16 26 S fs C 90 CE Note 2 P C 3700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 180 pF oes CE GE C 43 pF res Q 155 nC g Q I = I , V = 15 V, V = 0.5 V 28 nC e ge C C90 GE CE CES Q 49 nC Dim. Millimeter Inches gc Min. Max. Min. Max. A 4.7 5.3 .185 .209 t Inductive load, T = 25C 46 ns d(on) J A 2.2 2.54 .087 .102 1 t I = I , V = 15 V 57 ns A 2.2 2.6 .059 .098 ri C C25 GE 2 b 1.0 1.4 .040 .055 t R = 2.7 , V = 0.5 V 260 500 ns d(off) G CE CES b 1.65 2.13 .065 .084 1 Note 3 b 2.87 3.12 .113 .123 t 50 100 ns 2 fi C .4 .8 .016 .031 E 1.5 2.6 mJ D 20.80 21.46 .819 .845 off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 t Inductive load, T = 125C 48 ns d(on) J L1 4.50 .177 t I = I , V = 15 V 59 ns P 3.55 3.65 .140 .144 ri C C25 GE Q 5.89 6.40 0.232 0.252 E R = 2.7 , V = 0.5 V 4.0 mJ on G CE CES R 4.32 5.49 .170 .216 t 300 ns Note 3 d(off) S 6.15 BSC 242 BSC t 70 ns fi E 2.4 mJ off TO-268 Outline R 0.35 K/W thJC R (TO-247) 0.25 K/W thCK Notes:1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 % 3. Switching times may increase for V (Clamp) > 0.8 V , higher T or CE CES J Dim. Millimeter Inches increased R . G Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463