IXGP30N120B3 IXYS

IXGP30N120B3 electronic component of IXYS
IXGP30N120B3 IXYS
IXGP30N120B3 IGBT Transistors
IXGP30N120B3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXGP30N120B3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGP30N120B3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IXGP30N120B3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 30 Amps 1200V
Datasheet: IXGP30N120B3 Datasheet (PDF)
Price (USD)
1: USD 11.004 ea
Line Total: USD 11 
Availability - 264
  
Ship by Tue. 29 Jul to Thu. 31 Jul
QtyUnit Price
1$ 11.004
10$ 6.182
100$ 5.83
500$ 5.588

Availability 264
Ship by Tue. 29 Jul to Thu. 31 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 11.004
10$ 6.182
100$ 5.83
500$ 5.588


Availability 19
Ship by Tue. 29 Jul to Thu. 31 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 15.596
3$ 7.462
8$ 7.056

   
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We are delighted to provide the IXGP30N120B3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGP30N120B3 and other electronic components in the IGBT Transistors category and beyond.

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The IXGP30N120B3 is a three-phase, graphene-based insulated gate bipolar transistor (IGBT) module from IXYS Corporation. It features a current rating of up to 30A and a voltage rating of up to 1200V. The device also features rugged, enhanced construction including bonding wires which are free from plastic material to enable superior thermal conductivity and reliability. The device is optimized for renewable energy applications and provides fast switching and high efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
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Ixys Corporation
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IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
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IXYS RF
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