TM GenX3 600V IGBT V = 600V IXGR48N60C3D1 CES with Diode I = 56A C25 V 2.7V CE(sat) (Electrically Isolated Back Surface) t = 38ns fi(typ) High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TM ISOPLUS 247 V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C I T = 25C 56 A ISOLATED TAB C25 C E I T = 110C 26 A C110 C I T = 110C 27 A D110 C G = Gate C = Collector E = Emitter I T = 25C, 1ms 230 A CM C I T = 25C 30 A A C E T = 25C 300 mJ AS C Features SSOA V = 15V, T = 125C, R = 3 I = 100 A GE VJ G CM z Silicon Chip on Direct-Copper Bond (RBSOA) Clamped Inductive Load V 600 V CE (DCB) Substrate - UL Recognized Package P T = 25C 125 W C C - Isolated Mounting Surface T -55 ... +150 C - 2500V Electrical Isolation J z Avalanche Rated T 150 C JM z Square RBSOA T -55 ... +150 C stg z Anti-Parallel Ultra Fast Diode T 1.6mm (0.062 in.) from Case for 10s 300 C z L Fast Switching z T Plastic Body for 10 Seconds 260 C International Standard Package SOLD V 50/60 Hz RMS, t = 1min 2500 V~ ISOL F Mounting Force 20..120 / 4.5..27 N/lb. Advantages C Weight 5 g z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) J Min. Typ. Max. z High Frequency Power Inverters V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z UPS z I V = V 300 A Motor Drives CES CE CES V = 0V T = 125C 1.75 mA z GE J SMPS z PFC Circuits I V = 0V, V = 20V 100 nA GES CE GE z Battery Chargers V I = 30A, V = 15V, Note 1 2.3 2.7 V CE(sat) C GE z Welding Machines T = 125C 1.8 V J z Lamp Ballasts 2009 IXYS CORPORATION, All rights reserved DS99810B(01/09)IXGR48N60C3D1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXGR) Outline (T = 25C, Unless Otherwise Specified) J Min. Typ. Max. g I = 30A V = 10V, Note 1 20 30 S fs C CE C 1960 pF ies C V = 25V, V = 0V, f = 1MHz 220 pF oes CE GE C 66 pF res Q 77 nC g Q I = 30A, V = 15V, V = 0.5 V 16 nC ge C GE CE CES Q 32 nC gc t 19 ns d(on) t 26 ns ri Inductive Load, T = 25C J E 0.41 mJ on I = 30A, V = 15V C GE t 60 100 ns d(off) V = 400V, R = 3 CE G t 38 ns fi E 0.23 0.55 mJ off t 19 ns d(on) t 26 ns ri Inductive Load, T = 125C J E 0.65 mJ on I = 30A, V = 15V C GE t 92 ns d(off) V = 400V, R = 3 t CE G 95 ns fi E 0.57 mJ off R 1.0 C/W thJC R 0.15 C/W thCS Reverse Diode (FRED) Characteristic Values (T = 25C, Unless Otherwise Specified) J Symbol Test Conditions Min. Typ. Max. V I = 30A, V = 0V, Note 1 T =25C 2.7 V F F GE J I I = 30A, V = 0V, -di /dt =100A/s, T = 100C 4 A RM F GE F J t V = 100V T =100C 100 ns rr R J I = 1A, -di/dt = 100A/s V = 30V 25 ns F R R 1.5 C/W thJC Note 1: Pulse test, t 300 s, Duty cycle, d 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537